GaN LED Translucent Electrode Annealing Resistance
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Solution Overview
Problem
Gallium nitride compound semiconductor light-emitting devices face challenges with increased specific resistance of p-type semiconductor layers due to hydrogen annealing, which affects the driving voltage and light emission efficiency.
Innovation Solution
A method involving the formation of a translucent conductive oxide film on a p-type semiconductor layer, followed by a hydrogen annealing process in a gas atmosphere, which reduces the specific resistance of the oxide film and prevents increased resistance in the p-type layer, thereby lowering the driving voltage. This process includes forming, etching, and annealing the oxide film in specific temperature and gas concentration conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a translucent conductive oxide film (such as ITO) is used as a positive electrode to improve light transmittance, then light emission efficiency is improved, but the specific resistance of the electrode increases
Solution Approach 1:
The patent applies parameter changes by performing annealing treatment on the ITO film at specific temperatures (400-900°C) in a nitrogen or hydrogen atmosphere. This thermal treatment modifies the physical and electrical parameters of the ITO film, reducing its specific resistance from typically high values to below 10^-3 Ω·cm, while preserving its high light transmittance properties. The annealing process optimizes the balance between electrical conductivity and optical transparency.
2Illumination intensity
If a translucent positive electrode is used to allow light emission to the outside, then light emission efficiency is improved, but the contact resistance with the p-type semiconductor layer increases
Solution Approach 1:
The patent utilizes parameter changes through annealing treatment to modify the electrical properties of the ITO film. By controlling the annealing temperature (400-900°C) and atmosphere (nitrogen or hydrogen), the specific resistance of the ITO film is reduced to below 10^-3 Ω·cm. This dramatic reduction in resistance enables the ITO film to serve as both a translucent electrode for light emission and a low-resistance contact with the p-type semiconductor layer, resolving the contradiction between transparency and conductivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method results in a gallium nitride compound semiconductor light-emitting device with reduced specific resistance and driving voltage, enhancing light emission characteristics and efficiency.
Implementation Method 1
A method is provided in which a translucent conductive oxide film is formed on a p-type semiconductor layer of a gallium nitride compound semiconductor device. After the translucent conductive oxide film is formed on the p-type semiconductor layer, a hydrogen annealing process of annealing the film in a gas atmosphere including hydrogen (H2) is performed.
Implementation Method 2
In the annealing process performed in the gas atmosphere including hydrogen, hydrogen is bonded to Mg or Zn doped into a p-type semiconductor layer of a gallium nitride compound semiconductor light-emitting device, and hinders impurities, such as Mg or Zn, from serving as acceptors.
Data Source
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AI summary
The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).