GaN LED Transparent Electrode Adhesion via Plasma-Oxidized Indium Oxide
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Solution Overview
Problem
The manufacturing process of GaN-based LEDs is complex due to the need for separate processes to form transparent electrodes and protective films, and existing protective films like SiO2 or SiN exhibit poor adhesion, leading to defective adhesion and reduced reliability.
Innovation Solution
A method where a transparent electrode and protective film are simultaneously formed using a plasma-oxidized or ashed indium oxide layer, with optional adhesive layers, eliminating the need for separate etching processes and enhancing adhesion between the film and electrodes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If separate processes are used to form transparent electrodes and protective films, then the manufacturing process can be completed with existing materials, but the overall manufacturing process becomes complex and time-consuming
Solution Approach 1:
The patent combines the transparent electrode and protective film into a single integrated layer structure. The indium oxide layer serves dual functions as both transparent electrode and protective film, eliminating the need for separate formation processes. This merging reduces process complexity and manufacturing time while maintaining the required electrical and protective functions.
Solution Approach 2:
The indium oxide layer is designed to perform multiple functions simultaneously: it acts as a transparent electrode for electrical conduction, a protective film for surface protection, and an adhesive layer for bonding. This multi-functionality approach simplifies the overall structure and reduces the number of manufacturing steps required.
2Reliability
If SiO2 or SiN protective films are used, then the protective film can be formed, but adhesion performance is poor leading to defective adhesion
Solution Approach 1:
The patent changes the material composition and physical properties of the protective film by using indium oxide instead of conventional SiO2 or SiN. This parameter change in material selection fundamentally improves adhesion performance to the GaN layer, eliminating the defective adhesion problem while maintaining protective film functionality.
Solution Approach 2:
The patent employs indium oxide as a composite material that combines the properties of transparent electrode and protective film with superior adhesion characteristics. This material choice creates a composite structure that simultaneously achieves good adhesion, optical transparency, and protective functionality.
3Productivity
If multiple separate layers are used for transparent electrode and protective film, then material selection is flexible, but the manufacturing process time increases
Solution Approach 1:
The patent merges the transparent electrode and protective film formation into a single deposition process. By using indium oxide that serves both functions, the manufacturing time is reduced as one less layer needs to be deposited and processed, directly improving productivity and reducing process time.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This simplifies the manufacturing process, improves adhesion, and stabilizes the diode characteristics by preventing defective adhesion and enhancing the reliability of GaN-based LEDs.
Implementation Method 1
a plasma-oxidized transparent layer
Implementation Method 2
a transparent layer subjected to an ashing process
Data Source
AI summary
A GaN-based LED comprises a substrate; an an-type GaN layer formed on the substrate; an active layer formed on a predetermined region of the n-type GaN layer; a p-type GaN layer formed on the active layer; a transparent electrode formed on the p-type GaN layer; a p-electrode formed on the transparent electrode; an n-type electrode formed on the n-type GaN layer on which the active layer is not formed; and a protective film formed on a resulting structure between the transparent electrode and the n-type electrode, the protective film being composed of a plasma-oxidized transparent layer.