GaN Magnetic Field Sensor With 2DEG Structure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Silicon-based Hall-effect sensors suffer from low electron mobility and large offset errors, making them unsuitable for high-temperature applications and low magnetic field environments, as they begin to break down beyond 200° C and have diminished sensitivity.
Innovation Solution
A magnetic field sensor with a semiconductor structure featuring a 2DEG and insulator members, including multiple sensing devices with electrodes extending from the insulator to the 2DEG, configured to sense magnetic fields along three axes, utilizing III-V compound layers for improved electron mobility and thermal stability up to 800° C.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If silicon-based Hall-effect sensors are used, then low cost and ease of manufacturing are achieved, but electron mobility is low and offset error is large
Solution Approach 1:
The patent changes the material parameter from silicon to III-V compound semiconductor (such as GaN), which fundamentally alters the electrical properties including electron mobility and offset error characteristics, enabling high-performance magnetic field sensing
Solution Approach 2:
The patent employs composite material structure with III-V compound semiconductor layers combined with specific doping configurations to achieve both low offset error and high electron mobility while maintaining manufacturing feasibility
2Ease of manufacture
If silicon-based Hall-effect sensors are used, then low cost and ease of manufacturing are achieved, but thermal stability is poor beyond 200° C
Solution Approach 1:
The patent changes the material parameter from silicon to III-V compound semiconductor (such as GaN), which fundamentally alters the thermal properties and enables operation at temperatures up to 800° C while maintaining manufacturing feasibility
Solution Approach 2:
The patent employs composite material structure with III-V compound semiconductor layers combined with specific doping configurations to achieve both low offset error and high electron mobility while maintaining manufacturing feasibility
3Ease of manufacture
If silicon-based Hall-effect sensors are used, then ease of manufacturing is achieved, but sensitivity is diminished in low magnetic field environment
Solution Approach 1:
The patent changes the material parameter from silicon to III-V compound semiconductor (such as GaN), which fundamentally alters the electrical properties including electron mobility and offset error characteristics, enabling high-performance magnetic field sensing
Solution Approach 2:
The patent employs composite material structure with III-V compound semiconductor layers combined with specific doping configurations to achieve both low offset error and high electron mobility while maintaining manufacturing feasibility
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides high sensitivity and low offset error, with electron mobility ranging from 1500 to 2000 cm2/V·s, surpassing silicon-based sensors and maintaining performance across a broader temperature range.
Implementation Method 1
A Hall-effect sensor produces an output signal proportional to the magnetic field that it is measuring
Data Source
AI summary
A magnetic field sensor may include a semiconductor structure having a planar surface, and first, second, and third sensing devices. The semiconductor structure may include a semiconductor member having a two-dimensional electron gas therein, and an insulator member disposed on the semiconductor member. The first sensing device may be configured to sense magnetic field along a first axis parallel to the planar surface. The second sensing device may be configured to sense magnetic field along a second axis parallel to the planar surface, and orthogonal to the first axis. The third sensing device may be configured to sense a magnetic field along a third axis normal to the planar surface. Each of the first, second, and third sensing devices may be formed in the semiconductor structure and may include electrodes that extend from the insulator member to the two-dimensional electron gas.