GaN Nanowire Heterojunction Ring Gate Breakdown Voltage
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Solution Overview
Problem
Semiconductor devices with AlGaN/GaN heterojunctions face challenges in achieving high breakdown voltage due to uneven electric field distribution, leading to device breakdown at critical field strength, limiting their power density and reliability.
Innovation Solution
A semiconductor device design featuring a substrate with specific region configurations and nanowire heterojunctions, including a ring-shaped gate and support structures, which enhances carrier confinement and control, increasing breakdown voltage and reducing leakage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a planar device structure with AlGaN/GaN heterojunction is used, then high electron mobility and strong polarization effects are achieved, but uneven electric field distribution occurs at the gate and drain edges leading to device breakdown
Solution Approach 1:
The patent transitions from a planar two-dimensional device structure to a three-dimensional nanowire structure. The nanowire heterojunction forms a vertical channel with radial field distribution, eliminating the edge electric field concentration problem inherent in planar devices. The ring-shaped gate wraps around the nanowire, creating a more uniform electric field distribution throughout the channel.
Solution Approach 2:
The patent employs curved surfaces in the nanowire structure, where the cylindrical nanowire geometry and ring-shaped gate create radially symmetric electric field distribution. This curvature eliminates the sharp edges in planar devices that cause field concentration, distributing the electric field uniformly across the channel cross-section.
2Reliability
If the breakdown voltage is increased to achieve higher power density, then device reliability improves, but the device structure becomes more complex
Solution Approach 1:
The device is segmented into distinct functional regions: the nanowire channel, ring-shaped gate, source and drain contacts, and isolation structures. This segmentation allows each component to be optimized independently for its specific function while contributing to the overall high breakdown voltage performance without excessive overall complexity.
Solution Approach 2:
The patent uses composite material structures with AlGaN/GaN heterojunctions forming the nanowire channel, combined with various dielectric materials for isolation and gate insulation. This composite approach enables tailored electrical properties in different regions, achieving high breakdown voltage through material optimization rather than structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves carrier mobility and control, significantly increasing breakdown voltage, reducing leakage, and enhancing the efficiency and linearity of radio frequency devices.
Implementation Method 1
due to the strong spontaneous polarization and piezoelectric polarization of AlGaN/GaN heterojunction
Implementation Method 2
due to the strong spontaneous polarization and piezoelectric polarization of AlGaN/GaN heterojunction
Implementation Method 3
a first nanowire heterojunction, the first nanowire heterojunction including a first gate section corresponding to the first region
Data Source
AI summary
A semiconductor device includes: a substrate, a first support structure, a first nanowire heterojunction, a source, a drain, and a ring-shaped gate. The substrate includes a first region, and a second region and a third region located on respective sides of the first region; the first support structure is located at least on the second region and the third region; the first nanowire heterojunction includes a first gate section corresponding to the first region, a first source section corresponding to the second region, and a first drain section corresponding to the third region; the first source section and the first drain section are located on the first support structure. The source is located on the first source section, the drain is located on the first drain section, and the ring-shaped gate wraps the first gate section.