GaN Semiconductor Stacks Insulation Pattern
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Gallium nitride semiconductor stacks grown on sapphire substrates have high crystal defect density and polarization issues, leading to current leakage when connected in series, while using a gallium nitride substrate as a growth substrate results in electrical conductivity issues causing short circuits due to current leakage.
Innovation Solution
A semiconductor device with an insulation pattern between the gallium nitride substrate and semiconductor stacks, formed using a mask region and open region pattern, electrically isolates the stacks from the substrate, preventing current leakage by using an insulation layer or structure that includes a sacrificial layer and cavities formed by electrochemical etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a gallium nitride substrate is used as a growth substrate, then crystal quality is improved and polarization effects are reduced, but electrical conductivity increases causing current leakage
Solution Approach 1:
The substrate surface is divided into multiple regions by forming insulation patterns that segment the conductive gallium nitride substrate into isolated areas, preventing current leakage between semiconductor stacks while maintaining the benefits of using a gallium nitride substrate for growth
Solution Approach 2:
An insulation pattern acts as an intermediary layer between the conductive gallium nitride substrate and the semiconductor stacks, blocking current leakage paths while allowing the substrate to continue serving as an effective growth substrate for high-quality crystal formation
2Object-generated harmful factors
If a sapphire substrate is used as a growth substrate, then electrical insulation is achieved, but crystal defect density increases
Solution Approach 1:
The insulation pattern serves as an intermediary solution that provides electrical isolation without requiring a sapphire substrate, allowing the use of a gallium nitride substrate for growth while still achieving the necessary electrical insulation through localized insulating structures
3Power
If semiconductor stacks are connected in series on a conductive substrate, then high voltage operation is enabled, but current leakage through the substrate causes short circuits
Solution Approach 1:
The conductive substrate is segmented into isolated regions by insulation patterns positioned between adjacent semiconductor stacks, allowing series connection for high voltage operation while preventing current leakage paths that would cause short circuits between stacks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively blocks current leakage, enabling high-voltage operation of light emitting devices by ensuring electrical insulation between semiconductor stacks and substrates, improving crystal quality and reducing polarization effects.
Implementation Method 1
cavities formed by electrochemical etching
Data Source
AI summary
Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.