Solid-State Devices TRIZ Cases

Crosslinked polysiloxane matrices disperse luminescent particles for wavelength conversion, resisting thermal degradation and intense light exposure.

Segmenting the buried interconnection layer prevents deep substrate penetration, reducing junction leakage caused by etching gas during common source formation.

High-index optical coupling-out layer reduces plasmon loss in OLEDs, increasing light extraction without milky appearance.

Segmented anode electrodes with recessed structures direct light from LEDs toward the display surface.

Segmented insulation blocks current leakage through the conductive substrate, enabling high-voltage operation.

A water-repellent tube isolates phosphors from LED heat while a dome-shaped resin section redirects trapped light to improve extraction efficiency.

A display panel manufacturing method uses tip structures on an auxiliary cathode layer to establish electrical connections via electrostatic discharge.

A method deposits polycrystalline silicon on a base wafer using an oxide film barrier and high temperature processing.

A cross-point array device uses a threshold switching layer to control current flow between conductive lines.

Optimized donor-acceptor ratios in the photoactive layer reduce recombination losses and improve efficiency in organic solar cells.

Introducing a third material with higher chemical affinity reduces required fluence, preventing metal electrode damage during separation.

Island dams guide encapsulation materials to prevent moisture and oxygen infiltration in organic light-emitting displays.

Thin wavelength-converting layers reduce light loss and power consumption in compact mobile devices.

Dummy vertical structures inside the array boundary allow a single mask etch process, reducing manufacturing complexity and costs.

A semiconductor device uses a light blocking layer and vertical contact plugs to dissipate stray charges from the signal processing circuit.

A slim light-emitting device uses a three-dimensional wavelength conversion member to redirect optical energy.

A Field Programmable Gated Array compensates for Compton scattering losses by summing adjacent detector block energies, increasing edge sensitivity.

A pressure body applies homogeneous force to load connection elements within a power semiconductor module housing.

A liner layer interposed between semiconductor layers protrudes through a capping layer to ensure uniform transistor properties.

Bridge electrodes connect display electrodes to voltage lines without direct contact, lowering electrical resistance.

A transparent electrode combines metal oxide fine wires with a conductive polymer layer to enhance electrical conductivity.

Array substrate integrates a carbon-based light blocking layer over dummy pixels to enable real-time gain and offset correction.

Segmenting the phosphor layer into patterns reduces total internal reflection at the LED-air interface, improving light extraction efficiency.

A composite semiconductor device integrates a light blocking layer between LED elements and connection pads to direct optical emission.

Nesting the second electrode inside a trench-shaped programmable material structure reduces masking steps while maintaining high integration density.

Halftone mask patterning forms photo spacers on the array substrate passivation layer.

A quantum dot memory switch injects carriers into charge storage regions to combine pass transistor and memory cell functions.

Inclined pixel defining surfaces guide organic layer deposition to form precise patterns, preventing emission efficiency variations across pixel regions.

Silicon oxide regions surround the heating element to confine thermal energy within the phase-change material.

Vertical stacking isolates contact plugs from bit lines, preventing short circuits while maintaining low resistance.

A metal buffer layer with high fracture toughness protects semiconductor light emitting device electrodes from thermal stress.

Stacking touch signal lines above data lines via insulating layers allows overlap with sub-pixel openings, improving aperture ratio without short circuit risks.

Transparent colloid curing layer trenches redirect light beams to minimize optical interference in image capturing modules.

Inkjet printing deposits color filter materials directly onto a TFT array substrate to form pixel structures without high-cost masks.

A composite adhesive sheet uses distinct rigidity zones to bond flexible display layers while accommodating structural bending.

Segmented electrodes reduce wiring resistance to minimize brightness unevenness in automotive lighting.

A discrete 3-D processor partitions memory and logic into separate dice to boost computational density.

An n-type semiconductor buffer layer reduces the hole-barrier height at the pentacene interface.

A split gate memory cell fabrication method grows dielectric layers using wet etching to protect the semiconductor substrate.

A continuous plasma etching method removes passivation material from feature bases while maintaining it on sidewalls.

A differential magnetoelectric spin-orbit logic device uses charge-to-spin conversion to switch magnetization states.

Connecting portions penetrate sub-pixels to reduce circuit layout area between gate lines and enhance open ratio.

Heat absorbing particles in sealing glue dissipate operational heat, extending flexible OLED panel lifespan.

Atomic layer deposition creates discrete atomic islands within a dielectric matrix to reduce lateral current leakage and enhance memory capacity.

Segmented gates in a CMOS unit manage threshold voltage to resolve the tradeoff between switching speed and leakage power.

An upconversion layer transforms stable green or red OLED emissions into blue light, eliminating unstable blue compounds to extend operational lifetime.

A display device arranges gate lines between unit pixels to reduce signal delay.

Segmenting dopant introduction through front and back surfaces halves maximum implant energy, enabling deeper photodiodes without costly equipment upgrades.

A gate insulating layer with a first via hole connects source-drain electrode wires to peripheral signal lines on an array substrate.

Segmented plasma islands create a bonding layer with adjustable energy, resolving debonding damage risks in microelectronic transfers.