SOI Semiconductor Device Light Blocking Layer Stray Charge Dissipation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices used in ultraviolet light measuring and detecting devices face instability due to direct and oblique light exposure, which affects the operation of the signal processing circuit and can lead to stray charge accumulation, causing unstable operation.
Innovation Solution
A semiconductor device is designed with a light receiving part and a signal processing part on a substrate, featuring a horizontal light blocking layer and vertically extending electrical connecting members that block oblique light and connect to a ground or potential to dissipate stray charges, preventing instability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the signal processing circuit is exposed to light, then the light receiving element can detect ultraviolet light, but the signal processing circuit becomes unstable due to light exposure and stray charge accumulation
Solution Approach 1:
The device is divided into distinct functional regions: a light receiving region for UV detection and a signal processing region for circuit operations. The light blocking layer physically segments these regions, allowing UV light to reach the light receiving element while preventing light from reaching the signal processing circuit, thereby resolving the contradiction between detection capability and circuit stability.
Solution Approach 2:
A light blocking layer is introduced as an intermediary element between the light receiving element and the signal processing circuit. This layer selectively blocks light from reaching the signal processing circuit while allowing the detection function to operate, thus mediating the conflict between light exposure needed for detection and light exposure that causes instability.
2Object-affected harmful factors
If the light blocking layer is made continuous, then light blocking effectiveness improves, but manufacturing complexity and charge accumulation increase
Solution Approach 1:
The light blocking layer is segmented into multiple independent regions rather than forming a continuous structure. Each segment can be independently manufactured and positioned, reducing manufacturing complexity. The segments are spaced apart but collectively provide effective light blocking through their distributed arrangement.
Solution Approach 2:
Instead of relying solely on the planar arrangement of light blocking segments, the invention utilizes the vertical dimension by extending conductive members downward to connect the light blocking layer to ground. This three-dimensional approach allows charge dissipation without requiring a continuous light blocking structure, reducing manufacturing complexity while maintaining effectiveness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively blocks oblique light and dissipates stray charges, ensuring stable operation of the signal processing part and preventing pooling of charges, thus maintaining the accuracy and reliability of ultraviolet light measurements.
Implementation Method 1
a light blocking layer which blocks light incident on the signal processing part
Implementation Method 2
a plurality of electrical connecting members extending in a vertical direction between the light blocking layer and the substrate, and connected to a ground or a potential sufficient to draw out stray charges occurring in the light blocking layer
Data Source
AI summary
Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42. The plurality of contact plugs 52 have a ground or a potential sufficient to draw out stray charges occurring in the light blocking layer.


