GaN Superlattice Hot Electron Cooling for LED Intensity
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Solution Overview
Problem
Current light emitting devices face challenges in enhancing light intensity, despite efforts such as improving multi-quantum well structures and electron blocking layers, which have not yielded significant results.
Innovation Solution
A light emitting device structure incorporating a GaN-based superlattice layer with varying bandgap energy levels from the conductive semiconductor layer to the active layer, including multiple energy steps to effectively cool hot electrons and improve electron injection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional multi-quantum well structures and electron blocking layers are improved, then light emitting device performance is enhanced, but light intensity remains insufficient
Solution Approach 1:
The patent applies parameter changes by introducing a GaN-based superlattice layer with gradually varying bandgap energy levels (multiple energy steps) from the first conductive semiconductor layer to the active layer. This gradual parameter variation optimizes electron injection efficiency and cools hot electrons, thereby significantly enhancing light intensity while maintaining device performance.
Solution Approach 2:
The patent employs composite materials by creating a superlattice structure composed of alternating GaN layers with different bandgap energy levels. This composite structure combines multiple material properties to achieve both high electron injection efficiency and effective hot electron cooling, resolving the contradiction between device performance and light intensity.
2Use of energy by moving object
If forward voltage is applied to generate light energy, then light is emitted, but significant energy is lost as heat
Solution Approach 1:
The patent uses parameter changes by implementing a superlattice layer with gradually varying bandgap energy levels, which optimizes the energy distribution of electrons during injection. This gradual energy transition reduces excessive electron energy (hot electrons) that would otherwise be converted to heat, thereby improving energy conversion efficiency to light and reducing heat loss.
Solution Approach 2:
The patent converts the harmful effect of hot electrons (which cause heat loss) into a beneficial effect by using the superlattice layer's energy steps to systematically cool electrons. The energy that would be wasted as heat is instead gradually dissipated through the superlattice structure, improving overall energy efficiency and light output.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This structure enhances light intensity by effectively cooling hot electrons and improving electron injection efficiency, leading to a high-power light emitting device with enhanced performance.
Implementation Method 1
the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114
Implementation Method 2
A light emitting device (LED) includes a p-n junction diode having a characteristic of converting electric energy into light energy. When forward voltage is applied to the LED, electrons of an n layer are bonded with holes of a p layer, so that energy corresponding to an energy gap between a conduction band and a valance band may be generated. This energy is mainly realized as heat or light, and the LED emits the energy as the light.
Data Source
AI summary
Embodiments of the present invention include a light emitting element, a method for manufacturing the light-emitting element according to one embodiment of the present invention, comprises: a first conductive semiconductor layer 112; a GaN-based superlattice layer 124 on the first conductive semiconductor layer 112; an active layer 114 on the GaN-based superlattice layer 124; and a second conductive semiconductor layer 116 on the active layer 114, wherein the GaN-based superlattice layer 124 has a bandgap energy level that varies in a direction from the first conductive semiconductor layer 112 to the active layer 114.