Solid-State Devices TRIZ Cases

A grating and sensor array determine three-dimensional touch coordinates by calculating optical path differences through light transmission gaps.

Transparent metal layers enhance adhesion between data metal and insulating substrates, reducing masking steps and fabrication time.

Removing residual polycrystalline ITO particles from slit electrode intervals prevents electric field disorders and increases transmittance.

Chlorine-methane plasma etches tungsten at low temperatures, avoiding thermal damage to inter-layer dielectrics.

Single-walled carbon nanotube control circuits drive crystalline semiconductor light emitting diode pixels with high field effect mobility.

A metal complex and organic compound composition with a LUMO energy difference under 0.40 eV enables efficient electron injection.

Segmented peripheral and cutting-area seals prevent moisture ingress while avoiding interference with device separation processes.

Segmented charge trapping layers in trenched structures prevent program disturb and short channel effects while enabling thinner gate oxides.

A planar strained-layer superlattice focal plane array uses impurity-doped regions for electrical isolation.

Curved orthogonal projections maximize electrode overlap to boost capacitance without expanding the footprint, improving aperture ratio and charging rate.

Compact ligands replace long chains in quantum dot emissive layers to resolve defect passivation and charge transport bottlenecks.

Segmented Hall elements with distinct orientations transmit binary signals to resolve tool orientation precision limits in magnetic resonance systems.

Inverting high aspect ratio pillars into planar trenches simplifies complex semiconductor fabrication processes.

A method deposits a metal resistance layer on an interlayer film to enable dual-height vias for flexible circuit design.

An auxiliary electrode layer on the non-light emitting region of a top-emitting OLED cathode reduces voltage differences between screen center and edge.

Segmenting crossbar columns into folded portions resolves pitch mismatch between interface devices and arrays, enabling scalable weight matrix storage.

Barium getter layers on substrate surfaces react with penetrating impurities to extend device lifetime.

Spacer layers shield titanium top electrodes from chlorine etchants, preventing leakage current and data retention loss.

Non-uniform channel widths in U-shaped transistors compensate for biasing differences against I-shaped devices, reducing color mura and image sticking.

Blue cholesteric liquid crystal layer and quarter wave plate recycle reflected light to maintain reflectance below 1% while boosting display luminance.

A photosensitive thin film transistor with a vertical channel detects reflected light to resolve manufacturing complexity while maintaining high responsivity.

Nested reflective structures guide LED light upward to boost longitudinal luminance without increasing structural complexity.

An LED package integrates a segmented metal frame with an insulating separator to resolve heat dissipation limits while preventing delamination under UV stress.

An in-cell touch panel integrates pressure-sensitive detection electrodes with OLED cathode layers to detect capacitance variations for precise pressure sensing.

A gate-controlled diode switches between pn and Schottky modes to manage current flow in power converters.

Segmented photo-curable resin layers protect flexible display wiring, preventing contact with driving circuits and polarizers.

Mirror symmetrical OLED driving circuits share reset and power signal lines, reducing line density to enable higher pixel per inch panel designs.

Communicating grooves in pixel defining layers equalize film-forming solution volumes across adjacent subunits.

A sputtering mask with periodic through holes traps conductive oxide clusters, preventing dark spots and maintaining light emission efficiency.

A pre-curved support handle applies compression to epitaxial thin films, preventing crack propagation while accelerating etching speed.

Sidewall spacers formed via etching protect the gate insulation film from impurity ion penetration, maintaining nonvolatile memory cell reliability.

Patterned support ribs with varying thickness remove foreign substances and improve adhesion between the mask and substrate.

Segmented sealing substrate with branch conductors eliminates via hole drilling, reducing manufacturing complexity while preventing moisture ingress.

Inclined spray nozzles reduce shadow phenomena during OLED manufacturing by optimizing the incident angle of deposition material.

High triplet energy in the conjugated polymer prevents exciton quenching, boosting luminous efficiency and device lifetime.

A specific recess on the array layer allows the thin film encapsulation to fill and mechanically interlock with the substrate.

Non-aligned grid patterns reflect oblique light to reduce crosstalk and improve sensitivity.

An organic thin film transistor uses an organic/inorganic hybrid insulating layer to reduce leakage current.

A compositionally graded germanium conductor increases control gate surface area to enhance capacitive coupling in memory arrays.

HDP liner and steam densification prevent voids in high-aspect-ratio isolation trenches.

A conductive covering material lines capacitor electrodes to prevent etchant seepage during fabrication.

A peripheral anti-impact member absorbs impact energy before it reaches the sealing member, preventing cracks in the display area.

Replacing polarizing plates, a pigment mixing layer reduces ambient reflection while maintaining high transmittance and device flexibility.

Graded heat-conducting particles in LED potting material dissipate thermal energy from the chip.

Vertical stacking of multiple metal layers routes fan-out lines through a compact peripheral region, preventing wiring disconnection and overheating.

Segmented reflecting parts isolate adjacent LED chips, preventing beam interference and increasing light extraction efficiency.

A GaSb light receiving device uses a co-doped substrate to reduce optical absorption and enhance infrared light transmittance.

Vertical stacking of MOSFET and optical elements reduces mounting area while conductive shielding minimizes radiation noise.

Segmenting control and power switch ICs lowers switching losses while expanding the operational frequency range above 1 MHz.

Surface asperities form suction passages that evacuate air between the tape and chuck, preventing bubble formation and tape burning during plasma etching.

A light-emitting device composition mixes diazine skeleton compounds with aromatic amines for single-step evaporation deposition.

Helium plasma modifies the memory cell surface morphology, preventing dead layer formation and dopant loss during encapsulation.

Frit seals and resin reinforcement enclose organic light-emitting pixels, reducing moisture ingress to extend device lifespan.

Rigid encapsulation supports soft silicone LEDs, resolving hardness versus light transmissivity trade-offs.

Selective epitaxial silicon germanium deposition improves PFET carrier mobility while avoiding NFET degradation.

Through-silicon vias form a metal fence around memory cell arrays to shield electromagnetic interference while dissipating heat from the logic unit.

Stacked conductive pattern layers connected via via holes reduce wiring resistance while a same-layer storage capacitor increases charge capacity.

A segmented gate insulating layer with paraelectric regions stabilizes polarization in ferroelectric memory devices.

A semiconductor protection diode exposes its PN junction at the end face of a semiconductor region to enable current flow during overvoltage breakdown.

Multi-layer top electrode with oxygen barrier maintains high oxygen concentration near the dielectric data storage layer.

A master-slave digital voltage regulator architecture uses shared PWM control data to drive multiple load bridges.

Zigzag organic patterns in OLED sub-pixels eliminate shadowing effects to improve aperture ratio and resolution.

A receiving groove captures debris from damaged spacers before it invades pixel openings, reducing defect rates and enhancing display reliability.

Feedthrough pins bridge devices mounted on opposite block surfaces, expanding the mounting area without adding auxiliary members that degrade reliability.

Gradient refractive index lenses eliminate focusing modules in OLED displays, reducing device thickness while maintaining image clarity.

Light irradiation activates etchants to remove oxide layers, preserving silicon integrity during transfer to heat-sensitive substrates.

A punchthrough protection layer forms at the bottom of a channel-portion hole to stabilize the interface state within a semiconductor substrate.

Integrating a diffuser layer within the lens structure eliminates dead space between packages while maintaining high light flux levels.

Group-based ROM encoding reduces storage cells and power consumption by optimizing digital data segmentation.

Segmented capacitor electrodes connected by bridges maintain electrical conductivity while insulating films shield the structure from contaminants.

Segmenting continuous electrode layers into discrete units reduces IR drop and improves cell selectivity in vertical ReRAM devices.

An auxiliary layer with high electron mobility mediates the interface between solution and vacuum processed doped layers, reducing operating voltage.

A charge trap layer sits between a word line and an active region to form a SONOS structure.

Independent conduction paths in the memory cell increase bit density while preventing cross-talk errors between adjacent cells.

Universal contact plugs interface with multiple device types to eliminate redundant fabrication, reducing chip real estate and heat buildup.

A semiconductor capacitor uses a titanium-silicon nitride barrier layer to define sidewall space and enhance surface area.

Angled printed circuit board positions signal electronics below detector elements in a compact vertical stack.

High κ bonding structures replace oxide layers in SOI substrates, increasing adhesion energy to prevent voids and delamination during manufacturing.

Varying bandgap energy levels in a GaN superlattice cool hot electrons, resolving insufficient light intensity despite improved device performance.

A semiconductive polymer with triarylamine repeat units functions as a hole transport or emission material in organic light-emitting devices.

Side reflectors on transparent substrates redirect trapped photons to reduce total internal reflection and enhance emission efficiency.

Segmenting memory cells in series increases threshold voltage, and a multi-layer barrier prevents copper diffusion from interconnects.

A tunneling layer isolates the conductive filament to enable selective current flow in two-terminal memory cells.

Hierarchical routing minimizes wire length to reduce capacitance, noise, and frequency degradation in integrated circuits.

Naphtho-bis-thiadiazole polymers deliver high electron mobility through optimized molecular weight.

Air gaps between word-line conductive layers reduce parasitic capacitance and resistance, minimizing voltage boosting time differences.

An adhesion layer with titanium or titanium nitride enhances bonding between the silver reflection layer and organic film in luminescent displays.

Polygonal contact regions concentrate electric fields to lower initial break voltage, reducing characteristic variations during miniaturization.

Cutting active matrix substrates extends detection areas to outer edges while sealing members protect conversion layers from moisture.

Integrating encapsulation and color conversion into alternating layers resolves the aperture ratio bottleneck while reducing device thickness.

A metal reflective layer facilitates ultraviolet irradiation to decompose organic residues within an OLED light emitting layer structure.

A method joins thin-film glass substrates onto carriers to provide touch pattern units and display units before separating the layers.

Controlling the silicide layer thickness below 0.2 micrometers prevents leakage current increases while maintaining reliable ohmic contact in scaled devices.

Local grounding circuits segment long interconnect paths to reduce resistance and capacitance, ensuring uniform voltage across all memory cells.

A buffer layer enhances crystallization of small molecule organic semiconductor layers in thin film transistors.

Integrates flexible foam and rigid PET members in a single layer, eliminating stacked covers to maintain slim device thickness.

A color separation element array uses refractive index differences to separate incident light into wavelength bands within a transparent layer.