GaN Vertical Transistor and LED Integration

Solution Overview

Problem

Current LED lighting systems require dedicated electronic driver circuits for AC-DC power conversion and current sourcing, leading to increased cost and size, and reduced reliability due to the lack of monolithic integration of GaN-based LEDs and power transistors.

Innovation Solution

The integration of GaN-based vertical transistors and LEDs on a shared material platform, utilizing a vertically oriented stack structure with doped regions, a channel region, and a light-emitting material, along with dielectric and gate materials, to form a compact and reliable lighting system.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If dedicated electronic driver circuits are used for AC-DC power conversion and current sourcing, then the LED lighting system can function properly, but the cost and size increase

Engineering Contradiction:

Improvesystem reliabilityVSAvoidcircuit complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent combines the power transistor and LED into a single monolithic integrated device structure, where the transistor is formed in the same semiconductor layer as the LED. This merging eliminates the need for separate driver circuits and reduces the overall system complexity while maintaining proper AC-DC power conversion and current sourcing functions.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The integrated device structure serves multiple functions simultaneously - the same structure provides both the light-emitting diode function and the power transistor function for AC-DC conversion and current control. This multi-functionality reduces the number of separate components needed and simplifies the overall system architecture.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If dedicated electronic driver circuits are used for AC-DC power conversion and current sourcing, then the LED lighting system can function properly, but the manufacturing cost increases

Engineering Contradiction:

Improvesystem reliabilityVSAvoidmanufacturing cost

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines the power transistor and LED into a single monolithic integrated device structure, where the transistor is formed in the same semiconductor layer as the LED. This merging eliminates the need for separate driver circuits and reduces the overall system complexity while maintaining proper AC-DC power conversion and current sourcing functions.

Inventive Principle:

Principle #5Merging (Combining)

3Reliability

If dedicated electronic driver circuits are used for AC-DC power conversion and current sourcing, then the LED lighting system can function properly, but the form factor increases

Engineering Contradiction:

Improvesystem stabilityVSAvoidsystem size

Core Design Contradiction:

ReliabilityVSVolume of moving object

Solution Approach 1:

The patent combines the power transistor and LED into a single monolithic integrated device structure, where the transistor is formed in the same semiconductor layer as the LED. This merging eliminates the need for separate driver circuits and reduces the overall system complexity while maintaining proper AC-DC power conversion and current sourcing functions.

Inventive Principle:

Principle #5Merging (Combining)

4Device complexity

If GaN-based LEDs and power transistors are monolithically integrated, then the form factor and manufacturing cost are reduced, but the manufacturing precision requirements increase

Engineering Contradiction:

Improvesystem integrationVSAvoidfabrication precision

Core Design Contradiction:

Device complexityVSManufacturing precision

Solution Approach 1:

The patent segments the integrated device into distinct functional regions - the LED region with its contact structure and the transistor region with source, drain, and gate contacts - formed in the same semiconductor layer. This segmentation allows for systematic fabrication while achieving monolithic integration, balancing manufacturing precision requirements with integration benefits.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This integration significantly reduces the form factor and manufacturing cost of LED lighting systems, enhances system stability and reliability, and enables the development of advanced light-emitting power integrated circuits for emerging applications like VLC and smart lighting.

Implementation Method 1

when a suitable voltage is applied to the leads, electrons are able to recombine with electron holes within the device, releasing energy in the form of photons, with the color of the light (corresponding to the energy of the photon) determined by the energy band gap of the semiconductor. This effect is called electroluminescence.

Methodology Applied

Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS10355043B2Integrated vertical transistors and light emitting diodes

Publication Date: 2019.07.16 GLOBALFOUNDRIES US INC

AI summary

The present disclosure relates to semiconductor structures and, more particularly, to integrated vertical transistors and light emitting diodes and methods of manufacture. The structure includes a vertically oriented stack of material having a light emitting diode (LED) integrated with a source region and a drain region of a vertically oriented active device.