GaN Wafer Recycling via Temperature and Pressure Variation
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Solution Overview
Problem
Existing wafer recycling methods are inefficient in removing semiconductor layers, particularly gallium nitride (GaN) layers due to their strong binding structure, which makes it difficult to reuse wafers after device malfunction or normal operation cycles.
Innovation Solution
A wafer recycling method that varies temperature and pressure conditions to separate the GaN layer into gallium (Ga) and nitrogen (N) atoms, followed by removal through chemical or physical processes and washing, using equipment like MOCVD and techniques such as etching or polishing, to restore the wafer to its pre-deposition state.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional recycling methods are used to remove semiconductor layers, then the process is simple, but the removal efficiency is low due to the strong binding structure of GaN layers
Solution Approach 1:
The patent applies parameter changes by varying temperature and pressure conditions to separate GaN layers into gallium and nitrogen atoms. The method uses controlled temperature variation (heating to specific ranges) and pressure adjustment (vacuum or atmospheric conditions) to enable effective removal of the strongly bound GaN semiconductor layers, thereby improving removal efficiency without requiring overly complex equipment
Solution Approach 2:
The patent utilizes phase transitions by heating the GaN layer to separate it into liquid-phase gallium and gas-phase nitrogen through controlled temperature and pressure conditions. This phase transition approach enables complete separation and removal of the semiconductor layer, solving the efficiency problem caused by GaN's strong binding structure
2Manufacturing precision
If temperature and pressure conditions are varied to separate GaN atoms, then complete layer removal is achieved, but energy consumption increases
Solution Approach 1:
The patent optimizes energy consumption by precisely controlling temperature and pressure parameters within specific ranges rather than using extreme conditions. The method varies temperature to just sufficient levels needed for GaN separation and adjusts pressure conditions (vacuum or atmospheric) to facilitate the phase transition, achieving complete layer removal while minimizing unnecessary energy input
Solution Approach 2:
The patent replaces mechanical removal methods with thermal and pressure-based phase transition processes. By using controlled heating and pressure variation to induce phase changes in GaN, the method achieves complete layer separation more efficiently than mechanical means, reducing overall energy consumption while ensuring thorough removal
3Manufacturing precision
If multiple processing steps are used to remove remaining semiconductor layers, then complete removal is achieved, but processing time increases
Solution Approach 1:
The patent merges the separation and removal steps into a single integrated process. By combining the phase transition separation of GaN into gallium and nitrogen with the subsequent removal of remaining semiconductor layers in one continuous operation, the method achieves complete semiconductor layer removal without requiring multiple separate processing steps, thereby reducing total processing time
Solution Approach 2:
The patent applies preliminary action by first separating the GaN layer into gallium and nitrogen atoms through controlled phase transition before removing the remaining semiconductor layers. This preliminary separation step simplifies the subsequent removal process, enabling complete semiconductor layer elimination more quickly than if all removal steps were performed sequentially without the initial separation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively removes semiconductor layers, allowing wafers to be reused by breaking the strong binding structure of GaN and utilizing appropriate chemical or physical methods for complete layer removal and washing.
Implementation Method 1
separating an atom binding of a semiconductor layer deposited on a wafer by varying a temperature and pressure conditions
Implementation Method 2
separating an atom binding of a semiconductor layer deposited on a wafer by varying a temperature and pressure conditions
Data Source
AI summary
A wafer recycling method comprises varying a temperature and pressure conditions to remove a first semiconductor layer deposited on a wafer, removing a remaining semiconductor layer on the wafer through a chemical or physical process, and washing the wafer.