Gap-Filling Composition for Via Sidewall Metal Migration Barriers
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Solution Overview
Problem
The existing dual damascene process for forming rewiring layers in semiconductor devices fails to adequately prevent metal migration from vias and wirings to insulating layers, particularly on the side surfaces, leading to unreliable connections.
Innovation Solution
A composition for forming a gap-filling material containing specific compounds and polymers with a carbonyl bond, which can be used for temporary embedding of through holes in insulating layers, ensuring a barrier layer is formed on both lower and side surfaces, thereby reducing metal migration and enhancing the reliability of the rewiring layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a barrier-seed layer is formed only on lower surfaces of vias and wirings, then the process is simpler, but metal migration is not sufficiently prevented on side surfaces
Solution Approach 1:
The patent applies preliminary action by forming a gap-filling material in the through-holes before forming the barrier-seed layer. This preliminary filling creates a structured foundation that enables subsequent barrier layer formation on both lower and side surfaces of the vias and wirings, thereby preventing metal migration on side surfaces while maintaining process feasibility
Solution Approach 2:
The patent segments the through-holes by filling them with gap-filling material before forming the barrier-seed layer. This segmentation creates distinct regions that allow the barrier layer to be properly formed on side surfaces, separating the gap-filling function from the barrier function and enabling comprehensive metal migration prevention
2Manufacturing precision
If finer wiring is required for multilayer circuit boards, then higher performance is achieved, but metal migration becomes more significant
Solution Approach 1:
The gap-filling material is applied preliminarily before forming the barrier layer, creating a structured foundation that enhances barrier layer coverage on side surfaces. This preliminary structuring is particularly effective for finer wirings where metal migration risk is higher due to reduced dimensions
Solution Approach 2:
The patent applies local quality by providing gap-filling material specifically in through-holes and enabling barrier layer formation specifically on side surfaces of vias and wirings. This localized approach targets the critical regions where metal migration occurs most frequently, especially important for finer wiring structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed composition effectively prevents metal migration, allowing for the formation of a highly reliable rewiring layer with improved connectivity and reduced patterning failures during photolithography.
Implementation Method 1
containing: at least one of a compound and a polymer having a structure represented by the following Formula (1) and a carbonyl bond
Data Source
AI summary
A composition forming a gap-filling material, contains: at least one of a compound and polymer having structure represented by Formula (1) and carbonyl bond; and solvent.(R1 and R2 each independently represent hydrogen atom, cyano group, phenyl group, alkyl group having 1 to 13 carbon atoms, halogen atom, —COOR11 (R11 represents hydrogen atom or alkyl group having 1 to 4 carbon atoms), or —COO—. When two or more R3's are present, two or more R3's may be the same or different. R3 represents methoxy group, alkyl group having 1 to 13 carbon atoms, or halogen atom, and n1 represents an integer of 0 to 4, and n2 represents an integer of 0 or 1, provided that the sum of n1 and n2 is 4 or less. X1 represents an ether or ester bond. X2 represents an ether or ester bond.(* represents a bond.)