Gas-Permeable Layer for Robust Semiconductor Substrate Bonding
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Solution Overview
Problem
Existing semiconductor device stacking technologies face challenges in forming robust bonds between substrates using materials that evolve gas upon heat curing, leading to peeling and void formation issues.
Innovation Solution
A method involving the application of a gas-permeable layer on the substrates' bonding surfaces, followed by a silicon oxide base material bond layer precursor coating, allows for the formation of a robust bond without gas-related damage by enabling gas escape during heat curing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a bonding material with high fluidity is used to form a bond layer between LSI chips, then the bonding process becomes easier, but gas evolution upon curing causes peeling
Solution Approach 1:
A release film is introduced as an intermediary layer between the bonding material and the LSI chip. This release film allows gas to escape during curing while preventing direct contact between the gas-evolving bonding material and the chip, thereby preventing peeling. The release film serves as a mediator that enables gas permeation while maintaining bond integrity.
Solution Approach 2:
The release film is designed with gas-permeable properties, allowing trapped gas to escape during the curing process. This porous structure prevents gas accumulation that would otherwise cause peeling, while still enabling the bonding material to flow and bond effectively.
2Reliability
If an insulating sheet in B stage is used to avoid gas evolution peeling, then bond layer integrity is maintained, but the material has limited availability
Solution Approach 1:
The release film serves as a mediator that enables the use of conventional high-fluidity bonding materials without suffering from gas evolution problems. This intermediary approach provides versatility by allowing multiple bonding material options while maintaining reliability through the gas-permeable release film.
3Strength
If direct joining of bonding surfaces is performed, then joint strength is high, but the bonding surfaces require high flatness and minimal surface roughness
Solution Approach 1:
The release film acts as an intermediary layer that compensates for surface irregularities. By allowing gas to escape through the release film during curing, the bonding process can tolerate higher surface roughness and less stringent flatness requirements while still achieving strong joints.
Solution Approach 2:
The introduction of the release film changes the bonding parameters by adding a gas-permeable interface. This allows the bonding process to proceed with relaxed surface preparation requirements while maintaining joint strength through the release film-mediated curing process.
4Temperature
If organic silicon base materials are used for embedment and heat stability, then thermal performance is improved, but large volume of gas evolves upon heat curing causing peeling
Solution Approach 1:
The release film serves as a critical intermediary that enables the use of organic silicon base materials by providing a gas escape path. During heat curing, the release film allows the large volume of gas evolved from these thermally stable materials to escape without causing peeling, thereby maintaining bond layer integrity while achieving superior heat stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach prevents delamination and void formation, enabling reliable bonding of semiconductor devices even with materials that would typically cause issues due to gas evolution during curing.
Implementation Method 1
providing one or both of the substrates on the bonding surface with a gas-permeable layer
Implementation Method 2
said bond layer precursor coating is a silicon base material of the type that cures through formation of Si-O-Si bonds by condensation of silanol groups
Data Source
AI summary
A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.


