Solid-State Devices TRIZ Cases

A multifunctional metamaterial-based optical device integrates light coupling, propagation, and conversion into a unified semiconductor platform.

High-impurity separation regions suppress parasitic punch-through leakage currents, enhancing load current detection accuracy.

Segmented hydrophobic banks with varying widths compensate for shadow mask deposition errors, resolving thickness uniformity issues in OLED displays.

Forming spacers in openings protects contacts from etching damage while maintaining alignment precision.

A gas-permeable layer prevents delamination and void formation by allowing gas to escape during the curing of bond layer precursors.

Nano void regions adjacent to photodiodes act as getters to trap heavy metal contaminants, preventing defects and crosstalk.

An aluminum gate wire with a taper angle under 65 degrees prevents manufacturing defects while enabling high-speed signal transmission in OLED displays.

A recess channel transistor structure embeds the floating gate within a silicon substrate cavity to anchor the gate film stack and reduce leakage currents.

Dual ligand structure inhibits excimer formation, improving luminescence efficiency and device lifespan.

Vertical contact-via chains provide ballast resistance for uniform ESD current distribution without increasing layout area or parasitic capacitance.

A display device uses overlapping static electricity blocking layers to shield driving circuits and sensing electrodes from external discharge.

A photochromic electrode switches between transparent and opaque states to enable light sensing within a display panel.

A concave lens contacts a liquid encapsulant to form a bubble-free meniscus, eliminating air entrapment and improving light extraction efficiency.

Nitride transition metal via electrodes enable vertical current flow and high optical transmittance in flip-chip light emitting devices.

Voltage generating circuit controls selection line potentials to prevent unintended transistor state changes during nonvolatile memory erase operations.

A high Young's modulus adhesive layer bonds the active component array to a support structure in flexible display devices.

Segmented cutting and chemical de-flashing remove metal burrs from QFN packages, maintaining high singulation throughput while preventing short-circuits.

Inserting a metal layer between optical coupling layers increases light reflections to reduce energy loss and improve luminous efficiency.

A magnetic memory device uses a segmented track to maintain consistent bit shift speeds across varying current densities.

A transparent storage capacitor uses indium tin oxide and aluminum oxide layers to form a conductive and transparent first plate.

A light emitting diode integrates a concave-convex structure into the encapsulating body to concentrate emitted light and enhance luminous intensity.

Doped seed layers suppress interface dark current to maintain quantum efficiency without increasing die size.

A discrete capacitor mounted on a semiconductor die with flexible adhesive reduces inductance between the component and switching circuits.

Shared wiring in an LED module reduces bonding pads, shortening manufacturing time and lowering costs for high-resolution displays.

Flip-chip LED structure on silicon substrate integrates functional circuits directly into the package.

A semiconductor channel structure uses a horizontal portion to contact the substrate while vertical portions penetrate gate electrodes.

A stacked white light emitting diode module uses a phosphor layer to achieve high color saturation.

A condensed cyclic compound with boron atoms enables thermally activated delayed fluorescence in organic light-emitting devices.

A superimposed detector chip arrangement utilizes a connecting layer to integrate optoelectronic and microelectronic components vertically.

Silicon peroxide radicals in insulating layers supply oxygen to oxide semiconductor transistors, reducing threshold voltage fluctuations.

Multiple-fold grooves in resin films absorb cutting variance and prevent damage to thin elastic layers during substrate separation.

Segmented hole transport regions with Formula 1 and Formula 2 compounds prevent electron-induced hole extinction, extending device lifetime.

A phase-change memory structure uses conformal trench deposition to reduce operating current and power dissipation.

Optical interconnects in a 3D die stack replace electrical wires, eliminating resistive heating and capacitively-coupled noise to improve signal integrity.

Polyester resin composition with high trans-cis isomer ratio accelerates crystallization rate during injection molding.

A ceramic substrate package uses a thick metal supporting plate to conduct heat from LEDs to an external sink.

An oxide-nitride-oxide gate dielectric traps charge in a vacuum channel, reducing energy consumption while maintaining robustness.

A stepped structure forms a groove at via holes in the array substrate to accommodate columnar spacers, preventing sliding and misalignment between substrates.

Curved side surfaces formed by blocking patterns during cutting improve shock resistance against external impacts.

A blue organic light-emitting layer forms via vapor deposition to ensure uniform thickness across the display substrate.

Removing sacrificial elements via etching preserves conductor integrity during high-temperature processing.

An integrated mother substrate combines light guiding and LED mounting, eliminating separate guide plates and simplifying manufacturing.

Phosphor-free transparent resin embedded between densely disposed light emitting elements eliminates harmful fluorescence emission that causes color unevenness.

A flash memory sensing circuit uses modulated clock signals to perform successive latching operations for rapid programming verification.

Extending an electrode down a charge conversion layer side face to the substrate suppresses layer degradation and prevents creeping discharges.

A display substrate tuning layer adjusts thicknesses across subpixels to enhance light emission efficiency.

Gap-filling insulation supporter stabilizes high aspect ratio semiconductor patterns, preventing leaning during cleaning processes.

Segmenting the transfer gate reduces overlap with isolation regions, suppressing noisy electron generation and improving dark characteristics.

A miniature image sensor uses a silicon substrate with crystal orientation (110) to form deep insulating walls via dopant channeling.

Preliminary ultraviolet light curing crosslinks the insulation layer, preventing thermal deformation of openings during subsequent high-temperature annealing.