Semiconductor Channel Structure With Horizontal Substrate Contact
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Solution Overview
Problem
The challenge in semiconductor devices is to stably connect channel layers to a semiconductor substrate while maintaining a reduced size of the channel hole, as smaller channel holes lead to increased process defects and reduced integration density.
Innovation Solution
A semiconductor device with a channel structure that includes a horizontal portion in contact with the substrate and vertical portions extending through gate electrodes, where a dielectric structure covers the horizontal portion and is interposed between the vertical portions and gate electrodes, allowing for stable connection without increasing channel hole size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the channel hole size is reduced to increase integration density, then the degree of integration is improved, but process defects increase and connection stability deteriorates
Solution Approach 1:
The channel structure transitions from a simple vertical channel to a three-dimensional structure with both horizontal and vertical portions. The horizontal portion extends along the substrate surface while the vertical portion penetrates through the stacked structure, creating a L-shaped or T-shaped configuration that increases contact area without requiring larger channel holes.
Solution Approach 2:
The channel structure is divided into distinct horizontal and vertical portions that serve different functions. The horizontal portion provides stable substrate connection, while the vertical portion enables penetration through gate electrodes, allowing each segment to optimize for its specific purpose.
2Productivity
If the channel hole size is reduced, then integration density is improved, but manufacturing precision requirements increase
Solution Approach 1:
By adding the horizontal dimension to the channel structure, the design compensates for the reduced vertical channel hole size. The horizontal portion provides additional connection path and area, reducing the reliance on precise vertical alignment and smaller hole dimensions.
3Device complexity
If a conventional vertical channel structure is used, then the structure is simple, but stable connection to the substrate cannot be achieved with reduced channel hole size
Solution Approach 1:
The channel structure incorporates a horizontal portion that extends along the substrate surface in addition to the vertical portion. This dimensional addition provides enhanced substrate contact area and improved mechanical/electrical connection stability without significantly complicating the overall fabrication process.
Solution Approach 2:
The horizontal portion of the channel structure is formed to establish stable substrate connection before the vertical portion is completed. This preliminary horizontal connection provides a robust foundation that ensures reliable substrate attachment even when the final vertical channel hole size is reduced for higher integration.
Data Source
AI summary
A semiconductor device includes a stacked structure disposed on a semiconductor substrate. The stacked structure includes interlayer insulating layers and gate electrodes, alternately stacked. Separation patterns are disposed to penetrate the stacked structure. A channel structure is disposed between the separation patterns. The channel structure includes a horizontal portion interposed between the stacked structure and the semiconductor substrate while being in contact with the semiconductor substrate and includes vertical portions extending from the horizontal portion in a vertical direction and penetrating the stacked structure. A lower structure is interposed between the horizontal portion and the separation patterns. A dielectric structure is interposed between the vertical portions and the stacked structure and extends between the horizontal portion and the stacked structure.