Semiconductor Pattern Leaning Prevention via Insulation Supporter
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Solution Overview
Problem
High aspect ratio patterns in semiconductor devices tend to lean during the cleaning process due to increased aspect ratios, especially when the design rule is less than 20 nm, making it difficult to prevent pattern leaning effectively.
Innovation Solution
A method involving the formation of a supporter using an insulation layer, such as oxide or nitride, which gap-fills the space between patterns and covers their top surfaces, is implemented to prevent pattern leaning. This supporter is formed by etching the insulation layer using a photoresist pattern as an etching barrier, ensuring structural stability and remaining intact during the cleaning process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the aspect ratio of the pattern is increased to achieve higher integration, then the device density is improved, but pattern leaning occurs during the cleaning process
Solution Approach 1:
An insulation layer is introduced as an intermediary substance between the high aspect ratio patterns. This layer gap-fills the space between adjacent patterns and provides mechanical support, preventing the patterns from leaning during the cleaning process while allowing the high density layout to be maintained
Solution Approach 2:
The insulation layer is formed before the cleaning process to preemptively prevent pattern leaning. By preparing the supporting structure in advance, the patterns are stabilized before they are exposed to the cleaning conditions that would otherwise cause leaning
2Productivity
If the aspect ratio is increased beyond 15 for design rules of 20 nm or less, then the device integration is improved, but pattern leaning becomes difficult to prevent during cleaning
Solution Approach 1:
The insulation layer serves as a supporting intermediary that becomes increasingly critical as aspect ratio increases. For patterns with aspect ratios of 15 or more, this layer provides the necessary mechanical support to maintain dimensional accuracy throughout the manufacturing process
Solution Approach 2:
The properties of the insulation layer (such as material composition, thickness, and dielectric constant) are optimized to provide adequate support for high aspect ratio patterns while being removable or integrable with subsequent processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents pattern leaning during the cleaning process, enhancing the reliability of semiconductor devices by maintaining structural integrity and stability, even at high aspect ratios.
Implementation Method 1
etching the insulation layer by using the photoresist pattern as an etching barrier
Data Source
AI summary
A method for fabricating a semiconductor device includes forming a multilayer, forming a plurality of patterns by etching the multilayer and a portion of the substrate, forming a supporter to support the plurality of patterns, and removing residues formed during the etching.