Gas-Phase Developing Apparatus for Metal Resist Pattern Collapse
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In photolithography, the miniaturization of semiconductor devices leads to issues with pattern collapse due to residual developing or cleaning solutions on substrates, especially when using chemically amplified or metal-containing resists, as these solutions can cause defects in fine resist patterns.
Innovation Solution
A developing apparatus that uses a heating part to support and heat the substrate, a chamber to form a treatment space, and a gas supplier to disperse a developing gas containing acid, which is then discharged from multiple ports above the heating part to develop the substrate without the need for treatment solutions, preventing pattern collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a developing solution containing organic solvent is supplied to the substrate, then the developing treatment can be performed, but pattern collapse occurs due to residual solution on fine resist patterns
Solution Approach 1:
The patent replaces the liquid developing solution system with a gas-phase developing system. Instead of using liquid organic solvents that cause pattern collapse, the invention uses vaporized developing agents (such as chloroform, carbon tetrachloride, or their mixtures with inert gases) to perform the developing treatment. This substitution eliminates the surface tension and residual liquid effects that cause pattern collapse while maintaining the chemical development capability through vapor-phase reaction with the resist material.
Solution Approach 2:
The patent changes the physical state parameter of the developing agent from liquid to gas phase. By vaporizing the developing agent and controlling the temperature and concentration parameters of the gas phase, the invention achieves effective developing treatment without the harmful effects of liquid residuals. The process controls parameters such as vapor concentration, temperature, and exposure time to optimize development while preventing pattern collapse.
2Productivity
If multiple developing apparatuses are stacked to improve productivity, then throughput increases, but the height constraint within standard equipment height is challenging
Solution Approach 1:
The patent divides the developing apparatus into modular, compact segments that can be vertically stacked. The gas-phase developing system requires less horizontal space compared to liquid handling systems, allowing for vertical arrangement of multiple processing stations. Each module includes integrated components for gas supply, substrate handling, and exhaust, enabling space-efficient stacking within standard equipment heights while increasing overall throughput.
Solution Approach 2:
The patent transitions from horizontal space utilization to vertical space utilization by stacking multiple developing apparatuses in the vertical dimension. The gas-phase process enables compact vertical integration of multiple processing stages, allowing equipment to fit within standard rack heights while providing increased capacity through parallel or sequential processing of multiple substrates.
3Manufacturing precision
If a dispersion mechanism with multiple discharge ports is used, then the developing gas is uniformly distributed, but the device complexity increases
Solution Approach 1:
The patent implements local quality by positioning multiple discharge ports at different locations within the treatment chamber to ensure uniform gas distribution across the substrate surface. Each discharge port is strategically placed to target specific regions, and the gas flow characteristics are optimized locally at each port to achieve homogeneous development across the entire substrate while avoiding over-complication of the overall system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively prevents pattern collapse in metal-containing resist patterns by using an acid-containing developing gas to remove unexposed areas, ensuring uniform development and improving throughput by allowing for the stacking of multiple developing apparatuses within a standard height, thus enhancing productivity and safety.
Implementation Method 1
a heating part configured to support and heat the substrate
Implementation Method 2
a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports
Data Source
AI summary
A developing apparatus for developing a substrate having a coating film of a metal-containing resist formed thereon, includes: a heating part configured to support and heat the substrate; a chamber configured to cover the heating part and form a treatment space above the heating part; a gas supplier to which a developing gas containing acid is supplied; and a dispersion mechanism configured to disperse the developing gas supplied to the gas supplier and discharge the developing gas to the treatment space from a plurality of discharge ports formed at positions above the heating part.