Gas Releasing Underlayers for EUV Lithography Patterning
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Solution Overview
Problem
Current underlayer materials for organometallic photoresists in semiconductor fabrication lack improvements, leading to suboptimal pattern fidelity and processing efficiency, particularly in extreme ultraviolet (EUV) lithography, where high-resolution patterning and reduced device sizes are desired.
Innovation Solution
A film-forming composition comprising a reactive gas releasing moiety, a polymer matrix, and an optional activating additive, where the reactive gas releasing moiety releases metal ligand forming molecules in response to radiation or heat, enhancing the patterning process by altering the organometallic photoresist properties and improving developer contrast.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional underlayer materials are used for organometallic photoresists, then the basic patterning function is maintained, but pattern fidelity and processing efficiency deteriorate
Solution Approach 1:
The underlayer composition is modified by incorporating gas-releasing compounds (such as carbonates, carbamates, or orthoesters) that release reactive gases (CO2, alcohol) upon heating or irradiation. This chemical parameter change enables the underlayer to actively participate in the patterning process by reacting with metal ligands in the photoresist, thereby improving pattern fidelity and processing efficiency simultaneously
Solution Approach 2:
The underlayer is designed as a composite material system combining polymer matrices (such as polysiloxane, polyacrylate, or polyester) with gas-releasing compounds. This composite structure provides both the mechanical stability needed for processing and the chemical reactivity required to enhance pattern formation, resolving the contradiction between reliability and manufacturing precision
2Manufacturing precision
If higher radiation dose is used for feature formation, then pattern fidelity improves, but processing efficiency deteriorates due to increased energy consumption and longer exposure time
Solution Approach 1:
The underlayer is pre-engineered with gas-releasing compounds that will decompose and release reactive gases during the patterning process. This preliminary preparation allows the system to generate the necessary chemical reactions in advance, reducing the radiation dose required for feature formation while maintaining high pattern fidelity
Solution Approach 2:
The gas-releasing compounds in the underlayer act as intermediaries that facilitate the interaction between radiation and the organometallic photoresist. By releasing reactive gases that can react with metal ligands, these intermediaries enhance the photoresist's response to radiation, thereby improving pattern fidelity at lower radiation doses
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances pattern fidelity and processing efficiency by releasing reactive gases like H2O and CO2, which react with the photoresist, improving solubility contrast and reducing the radiation dose required for feature formation, thereby enabling lower defect patterns and more precise patterning.
Implementation Method 1
the reactive gas releasing moiety releases metal ligand forming molecules in response to radiation or heat
Implementation Method 2
the reactive gas releasing moiety releases metal ligand forming molecules in response to radiation or heat
Data Source
AI summary
Gas releasing compositions that can facilitate improved patterning of organometallic resists are described. The gas releasing compositions can release water, carbon dioxide, or alcohols in response to radiation or heating. A film-forming composition is composed of a flowable blend of a reactive gas releasing moiety, a matrix forming species, an organic solvent, and an optional activating agent. An underlayer composition is composed of a blend of a reactive gas releasing moiety, a polymer matrix and an optional activating additive. Multilayer structures are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo-hydroxo compositions, which are placed over a gas releasing underlayer formed on a substrate, such as a semiconductor wafer. Methods for patterning multilayer structures are also described.