Gas Ring Structure for High-Temperature Wafer Thermal Processing

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Solution Overview

Problem

High-temperature preheating in thermal processing apparatuses for semiconductor wafers leads to discoloration of gas rings, reducing their reflectivity and impairing the ability to reach desired processing temperatures due to increased surface temperature exceeding 800°C.

Innovation Solution

A thermal processing apparatus design featuring an annular gas ring with a solid, high-mass second ring that has a smaller inner diameter, providing a gap for processing gas flow and a labyrinthine resisting unit to reduce gas velocity, along with a cooling mechanism to prevent temperature increases and discoloration, ensuring uniform gas supply and maintaining reflectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Temperature

If the preheat temperature is increased to exceed 800°C, then the processing temperature can be raised to meet growing demand for higher temperature processing, but the gas ring surface becomes discolored and reflectivity is reduced

Engineering Contradiction:

Improvepreheat temperatureVSAvoidgas ring reflectivity

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The gas ring is divided into multiple segments (first ring, second ring, third ring) with different functions. The second ring specifically contacts the side wall for cooling, while other rings handle gas distribution. This segmentation allows the cooling function to be isolated and optimized without affecting the entire gas ring structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The second ring acts as an intermediary heat transfer component between the chamber's side wall cooling mechanism and the gas ring structure. It conducts heat away from the gas ring to the cooled side wall, preventing discoloration and maintaining reflectivity of the gas ring surfaces exposed to light.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If the gas ring is cooled to prevent discoloration, then reflectivity is maintained, but the processing gas flow may be affected

Engineering Contradiction:

Improvegas ring reflectivityVSAvoidprocessing gas flow

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The gas ring is segmented into multiple functional zones: the second ring contacts the cooled side wall for thermal management, while the first and third rings (and internal passages) handle gas distribution. This segmentation allows independent optimization of cooling and gas flow functions without mutual interference.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different portions of the gas ring have different properties: the second ring has high thermal conductivity to the cooled side wall for heat dissipation, while other portions maintain structural integrity and gas flow channels. This local differentiation allows simultaneous achievement of cooling and efficient gas distribution.

Inventive Principle:

Principle #3Local quality

3Reliability

If a cooling mechanism is added to the side wall, then gas ring discoloration is prevented, but device complexity increases

Engineering Contradiction:

Improvegas ring temperature controlVSAvoidcooling mechanism

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The cooling function is merged with the existing chamber side wall structure. The second ring of the gas ring directly contacts the cooled side wall, utilizing the chamber's existing cooling infrastructure rather than adding a separate cooling system. This integration minimizes additional complexity while achieving effective temperature control.

Inventive Principle:

Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents discoloration of the gas ring, maintaining reflectivity and ensuring the semiconductor wafer reaches the necessary processing temperature, thereby enhancing the thermal processing efficiency and effectiveness.

Implementation Method 1

a cooling mechanism cooling the side wall

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

irradiating a laminar precision electronic substrate (hereinafter, simply referred to as a 'substrate'), such as a semiconductor wafer, with light to heat the substrate

Methodology Applied

Scientific EffectLight absorption and heating: Absorption (EM radiation)

Data Source

PatentUS11798823B2Light irradiation type thermal process apparatus using a gas ring

Publication Date: 2023.10.24 SCREEN HOLDINGS CO LTD

AI summary

A gas ring is attached to an upper portion of a chamber side portion as a side wall of a chamber. The gas ring is formed by overlapping an upper ring and a lower ring. A gap between the upper ring and the lower ring provides a flow path for processing gas. A labyrinthine resisting unit is formed in the flow path. The mass of the lower ring having an inner wall surface is increased to increase heat capacity. The lower ring is attached to the chamber side portion to be in surface contact with the chamber side portion, so that thermal conductivity from the lower ring to the chamber side portion has a large value, and the amount of heat accumulated in the lower ring is reduced. An increase in temperature of the lower ring at thermal processing is thereby suppressed to prevent discoloration of the gas ring.