Semiconductor Gate-Cut Layout for Precise Through-Via Contacts
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high reliability, high speed, and multifunctionality due to complex structures, particularly in the formation of through-vias and contacts during back wiring processes, leading to dispersion issues.
Innovation Solution
The semiconductor device incorporates a specific layout with separation patterns, allowing for the exposure of dummy source/drain patterns and smooth formation of through-vias within gate cutting patterns, reducing dispersion and enhancing contact quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a separation pattern is added to enable sufficient substrate removal and through-via formation, then manufacturing precision and contact quality improve, but device structure complexity increases
Solution Approach 1:
The gate pattern is divided into multiple segments by the gate cutting pattern, which extends in the second direction across the gate pattern. This segmentation allows for precise control of substrate removal and through-via formation in different regions, improving manufacturing precision while managing complexity through functional division
Solution Approach 2:
The separation pattern is formed in advance before substrate removal and through-via formation. The separation pattern includes a first portion and a second portion that are strategically positioned to guide the substrate removal process and ensure precise exposure of the dummy source/drain pattern, enabling controlled through-via formation without increasing overall device complexity
2Ease of manufacture
If the gate pattern is separated by a gate cutting pattern to facilitate through-via formation, then ease of manufacture improves, but device complexity increases
Solution Approach 1:
The gate pattern is segmented by the gate cutting pattern that extends across it in the second direction. This segmentation simplifies the manufacturing process by creating discrete regions for through-via formation, making it easier to control and execute while the modular nature helps manage the added complexity
Solution Approach 2:
The gate cutting pattern acts as an intermediary structure that facilitates through-via formation. It provides a defined path and boundary for the through-via, making the manufacturing process easier by clearly guiding where substrate removal and via formation should occur, while the cutting pattern itself becomes a manageable structural element
Data Source
Figure 1
Figure 2
Figure 3
AI summary
A semiconductor device includes an active pattern spaced apart in a first direction, and extending in a second direction different from the first direction; a lower channel pattern and a lower source/drain pattern located on the active pattern and alternately arranged in the second direction; an upper channel pattern on the lower channel pattern, and an upper source/drain pattern on the lower source/drain pattern; a gate pattern extending in the first direction and located on the lower channel pattern and the upper channel pattern; a separation pattern located between one of the lower source/drain pattern and the upper source/drain pattern and another of the lower source/drain pattern and the upper source/drain pattern in the second direction; and a gate cutting pattern extending in the second direction across the gate pattern to separate the gate pattern.