Gate Insulating Layer Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
There is a need for semiconductor devices with improved electrical and reliability characteristics, particularly in terms of low power consumption and high integration density, which existing semiconductor devices have not adequately addressed.
Innovation Solution
A semiconductor device design incorporating a substrate with an active pattern, a gate electrode, a gate spacer, an inhibition layer, and a gate insulating layer that includes a high-k dielectric layer and a gate oxide layer, where the high-k dielectric layer is locally provided between the gate oxide layer and the gate electrode, and has varying thicknesses on different surfaces to reduce parasitic capacitance and internal leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a conventional gate insulating layer structure is used, then the device can be manufactured with standard processes, but the power consumption is high due to large parasitic capacitance and internal leakage current
Solution Approach 1:
The patent applies local quality by providing the high-k dielectric layer only in specific regions rather than uniformly across the entire gate insulating layer. The high-k dielectric layer is localized at the gate electrode edges where parasitic capacitance is most significant, while the gate oxide layer remains in contact with the channel layer. This localized application reduces parasitic capacitance and power consumption without compromising the essential insulating function or device reliability.
Solution Approach 2:
The patent uses a composite gate insulating layer structure combining two different dielectric materials: gate oxide layer and high-k dielectric layer. The gate oxide layer provides excellent interface quality and reliability with the channel layer, while the high-k dielectric layer contributes high dielectric constant for reduced parasitic capacitance. This composite structure leverages the complementary strengths of both materials to achieve low power consumption while maintaining device reliability.
2Object-affected harmful factors
If the high-k dielectric layer is provided across the entire gate insulating layer, then parasitic capacitance is maximally reduced, but manufacturing complexity increases due to additional process steps
Solution Approach 1:
The patent applies local quality by providing the high-k dielectric layer only in specific regions rather than uniformly across the entire gate insulating layer. The high-k dielectric layer is localized at the gate electrode edges where parasitic capacitance is most significant, while the gate oxide layer remains in contact with the channel layer. This localized application reduces parasitic capacitance and power consumption without compromising the essential insulating function or device reliability.
Solution Approach 2:
The patent applies partial action by depositing the high-k dielectric layer excessively across the gate electrode surface and then selectively removing it from certain regions. The high-k dielectric layer is initially formed over the entire gate electrode area, then etched back to expose the gate oxide layer in contact with the channel layer. This partial removal approach simplifies the deposition process while achieving the desired localized structure that reduces parasitic capacitance effectively.
3Use of energy by moving object
If the high-k dielectric layer thickness is uniform across all surfaces, then the fabrication process is simpler, but power consumption reduction is insufficient due to varying parasitic capacitance requirements
Solution Approach 1:
The patent applies local quality by creating different thicknesses of the high-k dielectric layer at different locations. The high-k dielectric layer is formed with greater thickness at the gate electrode edges where parasitic capacitance is most problematic, while being thinner or absent in regions直接接触 the channel layer. This spatially varying thickness optimizes power consumption reduction by matching the dielectric layer configuration to the local parasitic capacitance requirements.
Solution Approach 2:
The patent applies partial action by depositing the high-k dielectric layer excessively across the gate electrode surface and then selectively removing it from certain regions. The high-k dielectric layer is initially formed over the entire gate electrode area, then etched back to expose the gate oxide layer in contact with the channel layer. This partial removal approach simplifies the deposition process while achieving the desired localized structure that reduces parasitic capacitance effectively.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves reduced power consumption and improved reliability by minimizing parasitic capacitance and internal leakage current, enhancing the overall performance and integration density of the semiconductor device.
Implementation Method 1
The high-k dielectric layer may be locally provided between the gate oxide layer and the gate electrode
Implementation Method 2
The gate oxide layer may be between the high-k dielectric layer and the active pattern
Data Source
AI summary
Disclosed are a semiconductor device and a method of fabricating the same. The device may include a substrate, an active pattern in an upper portion of the substrate and is extending in a first direction, a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction, a first gate spacer covering a side surface of the gate electrode, a first inhibition layer between the gate electrode and the first gate spacer, and a gate insulating layer between the gate electrode and the active pattern. The gate insulating layer may include a high-k dielectric layer and a gate oxide layer. The gate oxide layer may be between the high-k dielectric layer and the active pattern. The high-k dielectric layer may be between the gate oxide layer and the gate electrode.