Gate Electrode Recess Layout for Lower Parasitic Capacitance
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Solution Overview
Problem
As the integration level of integrated circuit semiconductor devices increases, parasitic capacitance between elements also increases, leading to reduced operation speed and reliability of transistors.
Innovation Solution
The integrated circuit semiconductor device incorporates a recess region between gate electrodes and active fins, reducing the area of sidewalls and total gate electrodes to minimize parasitic capacitance, thereby enhancing operation speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the integration level of transistors is increased, then the transistor density and functionality are improved, but the parasitic capacitance between elements increases
Solution Approach 1:
The patent extracts and removes the harmful portion of the gate electrode structure by forming recess regions that eliminate unnecessary sidewall areas. This extraction of excess conductive material directly reduces the parasitic capacitance between adjacent gate electrodes while preserving the functional gate structure needed for transistor operation.
Solution Approach 2:
The patent introduces asymmetry in the gate electrode structure by creating non-uniform sidewall widths through recess regions. The sidewalls adjacent to the recess have different widths compared to those farther from the recess, optimizing the balance between maintaining sufficient gate control and minimizing parasitic capacitance area.
2Speed
If the parasitic capacitance is reduced by minimizing gate electrode area, then the operation speed is improved, but the gate control over the channel may be weakened
Solution Approach 1:
The patent applies local quality by creating recess regions at specific locations between adjacent gate electrodes where parasitic capacitance is most problematic. The sidewall widths are locally modified in these recess regions while maintaining full width in other areas, thereby reducing capacitance only where harmful without compromising overall gate control.
3Object-generated harmful factors
If the sidewall area of gate electrodes is reduced, then the parasitic capacitance is minimized, but the manufacturing precision requirements increase
Solution Approach 1:
The patent segments the gate electrode sidewalls into distinct regions with different widths by introducing recess regions. This segmentation allows independent optimization of capacitance-reduction areas while maintaining standard dimensions in other areas, making the manufacturing process more manageable and less precision-critical overall.
Data Source
AI summary
An integrated circuit semiconductor device includes a first transistor on a substrate. The first transistor includes a first gate electrode. A second transistor is on the substrate and is spaced apart from the first transistor. The second transistor includes a second gate electrode directly connected to the first gate electrode. A recess region is recessed in surfaces of the first and second gate electrodes and is arranged between the first and second gate electrodes. A first width of a first sidewall of the first gate electrode is less than a second width of a second sidewall of the first gate electrode adjacent to the recess region and opposite the first sidewall. A third width of a third sidewall of the second gate electrode is less than a fourth width of a fourth sidewall of the second gate electrode adjacent to the recess region and opposite the third sidewall.