Gate Separation Structure for Dense Semiconductor Transistors
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Solution Overview
Problem
As semiconductor devices become increasingly integrated, it is challenging to meet the required transistor performance due to the decreasing feature size of field-effect transistors (FETs), which affects the operation stability and reliability of integrated circuits.
Innovation Solution
The semiconductor device incorporates a gate separation structure with a gate separation liner and filling film on a connecting spacer, positioned between gate structures, to enhance the separation and insulation between gate electrodes, improving the structural integrity and performance of transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature size of FETs is decreased to increase integration, then integration density is improved, but transistor performance and operation stability deteriorate
Solution Approach 1:
The gate structure is segmented into multiple components: gate electrode, gate insulating film, and gate separation structure. The gate separation structure is further divided into gate separation liner and gate separation filling film, creating distinct functional zones that maintain performance while enabling higher integration.
Solution Approach 2:
The gate separation structure acts as an intermediary element between adjacent gate electrodes. It provides physical and electrical separation, preventing interference between neighboring transistors while allowing closer spacing, thus enabling higher integration without sacrificing stability.
2Productivity
If gate structures are placed closer together to increase integration, then device density is improved, but insulation between gate electrodes deteriorates
Solution Approach 1:
The gate separation structure serves as an intermediary barrier between adjacent gate electrodes. The gate separation liner provides a thin insulating layer that prevents direct electrical contact, while the gate separation filling film provides additional spacing and mechanical support, enabling dense packing without electrical interference.
Solution Approach 2:
The gate separation structure uses composite construction with gate separation liner (thin film insulator) and gate separation filling film (bulk insulator). This composite approach provides both electrical insulation and physical separation, addressing the interference problem while maintaining high device density.
3Reliability
If gate separation structure is added to improve insulation, then transistor reliability is improved, but device complexity increases
Solution Approach 1:
The gate separation structure is segmented into two distinct layers: gate separation liner in direct contact with the gate electrode, and gate separation filling film providing additional separation. This segmentation allows each layer to be optimized for its specific function while maintaining overall structural manageability.
Solution Approach 2:
The gate separation structure performs multiple functions: electrical insulation between gates, physical spacing maintenance, and structural support. By consolidating these functions into a single integrated structure, the design improves reliability without proportionally increasing complexity.
Data Source
AI summary
A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.