Multi-Gate Transistor Gate Shield Structure for Short-Channel Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in scaling and maintaining performance and reliability, particularly in multi-gate transistors with three-dimensional channels, where short channel effects and current control are difficult to manage.
Innovation Solution
The semiconductor device incorporates a gate structure with specific layers and patterns, including a gate insulating layer, gate filling layer, gate spacers, and gate capping patterns, designed to enhance control and reliability by optimizing the gate structure's configuration and materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If multi-gate transistor with three-dimensional channel is used for scaling, then device density is improved, but short channel effects and current control become difficult to manage
Solution Approach 1:
The gate structure is segmented into multiple functional layers: gate insulating layer, gate filling layer, gate spacer, gate shield insulating pattern, and gate capping pattern. This segmentation allows each layer to perform specific functions - the gate shield insulating pattern specifically addresses short channel effects by providing electrical isolation, while other layers handle gating and structural functions, collectively improving reliability without sacrificing density
Solution Approach 2:
The gate shield insulating pattern acts as an intermediary layer between the gate structure and the channel region. This intermediate insulating layer mediates the electrical interaction, blocking unwanted short channel effects while allowing the gate to maintain control over the channel, thus resolving the contradiction between high density and reliable short channel effect management
2Reliability
If gate structure complexity is increased with multiple layers and patterns, then current control capability is improved, but manufacturing complexity increases
Solution Approach 1:
The gate structure extends into the vertical dimension with multiple stacked layers (gate insulating layer, gate filling layer, gate spacer, gate shield insulating pattern, gate capping pattern). This dimensional expansion allows current control to be achieved through vertical layering rather than horizontal complexity, improving current control capability while managing manufacturing complexity through systematic layer deposition
Solution Approach 2:
The gate structure employs composite construction with different materials for each layer - insulating materials for gate insulating layer and gate shield insulating pattern, conductive materials for gate filling layer. This composite approach enables each material to be optimized for its specific function, improving overall current control capability while maintaining manufacturability through specialized material deposition processes
Data Source
AI summary
There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device including an active pattern extending in a first direction, a gate structure on the active pattern, the gate structure extending in a second direction different from the first direction and including a gate insulating layer and a gate filling layer, a gate spacer extending in the second direction, on a sidewall of the gate structure, a gate shield insulating pattern on a sidewall of the gate spacer, covering an upper surface of the gate insulating layer, and including an insulating material, and a gate capping pattern covering an upper surface of the gate filling layer, on the gate structure may be provided.