Gate Spacer Extension Into Undercut Regions for Dense Semiconductors
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Solution Overview
Problem
The existing technologies for semiconductor devices face challenges in optimizing the shape of gate spacers and replacement gate electrodes, which affect the electrical properties and integration density of these devices.
Innovation Solution
The semiconductor device design includes gate spacers extending into undercut regions between the gate electrodes and active regions, with varying widths and shapes to optimize electrical properties and reduce defects during the formation process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the gate spacer is formed with a conventional shape, then the manufacturing process is simple, but the electrical properties are not optimized
Solution Approach 1:
The gate spacer is divided into multiple segments: a first gate spacer portion extending from the gate electrode side surface into the undercut region, and a second gate spacer portion extending from the opposite side. This segmentation allows each portion to be optimized independently for electrical performance while maintaining manufacturability through standard spacer formation processes.
Solution Approach 2:
The gate spacer design extends into the undercut region, utilizing the vertical dimension beneath the gate electrode to improve electrical properties. By forming the spacer to extend into this previously underutilized space, the invention enhances device performance without increasing the horizontal footprint or complicating the manufacturing process.
2Reliability
If the gate spacer extends deeply into the undercut region, then the electrical properties are improved, but the manufacturing precision requirements increase
Solution Approach 1:
The gate spacer formation process utilizes self-aligned deposition techniques where the spacer material automatically conforms to the gate electrode and undercut region geometry. This self-alignment mechanism eliminates the need for separate alignment steps and reduces precision requirements, as the spacer shape is determined by the deposition process itself rather than requiring precise lithographic patterning.
3Adaptability or versatility
If the gate electrode width is varied for different active regions, then the device adaptability is improved, but the manufacturing complexity increases
Solution Approach 1:
The gate spacer formation process serves multiple functions: it provides electrical isolation, defines active region boundaries, and adapts to different gate electrode widths simultaneously. By using a universal spacer deposition process that conforms to any gate electrode geometry, the invention achieves device adaptability without requiring separate manufacturing processes for different device configurations.
Data Source
AI summary
A semiconductor device includes a first active region defined on a substrate, a first gate electrode across the first active region, a first drain region in the first active region at a position adjacent to the first gate electrode, an undercut region between the first active region and the first gate electrode, and a first gate spacer on a side surface of the first gate electrode and extending into the undercut region.