Gate Stack Memory Structure With Insulating Pattern for Yield
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Solution Overview
Problem
As the integration density of semiconductor devices increases, they suffer from deteriorated electrical characteristics and low production yield, necessitating improvements in both areas.
Innovation Solution
A semiconductor device is designed with a gate stack comprising alternately stacked conductive patterns and interlayer insulating patterns, a channel layer surrounded by the gate stack, a memory layer surrounding the channel layer, a source structure electrically connected to the channel layer, and an insulating pattern between the memory layer and the source structure, which enhances electrical and reliability characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the integration density of the semiconductor device is increased, then the operating speed and power consumption are improved, but the electrical characteristics deteriorate and production yield decreases
Solution Approach 1:
The gate electrode is divided into multiple segments (first gate electrode and second gate electrode) separated by an insulating pattern. This segmentation allows independent control of different channel regions, enabling optimized electrical characteristics for each segment while maintaining high integration density. The insulating pattern acts as a barrier that prevents electrical interference between adjacent segments.
Solution Approach 2:
An insulating pattern is introduced as an intermediary element between the memory layer and source structure, and between adjacent gate electrode segments. This intermediary prevents direct electrical contact and interference, allowing high integration density while maintaining proper electrical isolation and characteristic performance.
2Productivity
If the integration density of the semiconductor device is increased, then the operating speed and power consumption are improved, but the production yield decreases
Solution Approach 1:
The gate electrode is segmented into multiple independent sections with insulating patterns between them. This segmentation allows for modular manufacturing where defects in one segment do not propagate to adjacent segments, thereby maintaining production yield while achieving high integration density through compact arrangement.
Solution Approach 2:
Insulating patterns serve as intermediary elements that simplify the manufacturing process by providing natural barriers during fabrication. These intermediaries enable standard manufacturing techniques to be applied even at high integration densities, preventing yield degradation.
3Use of energy by stationary object
If the operating voltage is reduced, then the power consumption is decreased, but the electrical characteristics become more difficult to control
Solution Approach 1:
Different segments of the gate electrode can apply different voltages to different channel regions, creating local quality variations. This allows optimized control of electrical characteristics in each region while maintaining overall low power consumption through selective activation of only necessary segments.
Solution Approach 2:
The segmented gate structure enables dynamic voltage control where different segments can be independently adjusted based on operational requirements. This dynamic control maintains electrical characteristics even at reduced operating voltages by compensating through selective segment activation.
Data Source
AI summary
A semiconductor device may include a gate stack including conductive patterns and interlayer insulating patterns, which are alternately stacked with each other, a channel layer surrounded by the gate stack, a memory layer surrounding the channel layer, a source structure electrically connected to the channel layer, and an insulating pattern between the memory layer and the source structure. The memory layer and the source structure are spaced apart from each other, and the insulating pattern is in contact with the channel layer, the memory layer, and the source structure.