Gate Trench Semiconductor Structure for Leakage and Crosstalk Isolation
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Solution Overview
Problem
As semiconductor devices shrink, electrical interference between signal lines increases, and there is a need to reduce leakage current to ensure device reliability and improve switching characteristics.
Innovation Solution
A semiconductor device design featuring active regions with a gate trench and insulating barrier film that tapers downward, reducing leakage current and interference by acting as an electrical insulator between the gate dielectric film and the channel region, and optionally including an air gap for further stress reduction.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the size of semiconductor device is decreased, then the integration density is improved, but the leakage current increases
Solution Approach 1:
The gate structure is segmented into multiple gates (first gate and second gate) separated by a gate spacer, allowing independent control of different channel regions. This segmentation enables better suppression of leakage current in each segment while maintaining high integration density through compact arrangement
Solution Approach 2:
The insulating barrier film is selectively positioned under the gate structure at specific locations where leakage current occurs, providing localized suppression without affecting the entire device. The gate spacer is also positioned locally between gates to control leakage at critical interfaces
2Length of moving object
If the interval between constituent elements is reduced, then the device size is decreased, but the electrical interference between signal lines increases
Solution Approach 1:
The gate spacer acts as an intermediary insulating structure between the first gate and second gate, preventing electrical interference and cross-talk between adjacent signal lines while allowing the gates to be positioned close together for compact device size
Solution Approach 2:
The gate structure is divided into separate gates with insulating barriers between them, allowing each gate to control its own signal line independently without interference from neighboring lines, even when spaced closely for high density
3Reliability
If the gate structure is formed to contact side walls, then the control over channel is improved, but the stress on the structure increases
Solution Approach 1:
The insulating barrier film serves as a mediator between the gate structure and the channel region, providing mechanical support and stress relief while maintaining electrical control. This allows the gate to contact side walls for good channel control without excessive stress concentration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design achieves reduced leakage current, enhanced switching characteristics, and superior reliability by minimizing electrical interference and stress between neighboring cells.
Implementation Method 1
an insulating barrier film provided in each of the plurality of active regions under the gate trench, spaced apart from a lower surface of the gate trench
Data Source
AI summary
A semiconductor device includes a substrate comprising a plurality of active regions extending in a first direction and a device isolation region electrically isolating the plurality of active regions, a gate trench extending across the plurality of active regions and the device isolation region, a gate structure extending in the gate trench of each of and along opposite sidewalls of the plurality of active regions, a gate dielectric film formed between the gate trench and the gate structure in each of the plurality of active regions, and an insulating barrier film provided in each of the plurality of active regions under the gate trench spaced apart from a lower surface of the gate trench and extending in an extension direction of the gate trench.