Germanium Oxide Supporting Patterns for Memory Through Hole Uniformity

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Solution Overview

Problem

Existing semiconductor memory devices face challenges such as bowing and tilting phenomena during etching processes, leading to non-uniform through holes and potential electrical short circuits and reduced yield, due to material differences between supporting patterns and mold layers.

Innovation Solution

The use of germanium oxide for the supporting patterns and silicon nitride for the etch stop layer, along with oxide materials for the mold layers, prevents bowing and tilting, ensuring uniform through holes and maintaining the supporting patterns to support storage nodes during processing.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If different materials are used for supporting patterns and mold layers, then the supporting patterns can provide structural support, but bowing and tilting phenomena occur during etching leading to non-uniform through holes

Engineering Contradiction:

Improvestructural supportVSAvoidthrough hole uniformity

Core Design Contradiction:

StrengthVSManufacturing precision

Solution Approach 1:

The patent applies homogeneity by making the supporting pattern and mold layer from the same material (oxide layer), eliminating material differences that cause bowing and tilting during etching. This ensures uniform etching rates and maintains through hole uniformity while still providing the necessary structural support.

Inventive Principle:

Principle #33Homogeneity

Solution Approach 2:

The patent uses composite material strategy by forming both the supporting pattern and mold layer from oxide materials that exhibit similar etching characteristics. This composite approach with matched material properties prevents the bowing and tilting phenomena that occur when dissimilar materials are combined, thereby maintaining manufacturing precision.

Inventive Principle:

Principle #40Composite materials

2Ease of manufacture

If supporting patterns are removed after forming through holes, then the etching process is simplified, but storage nodes lack support during subsequent processing leading to misalignment

Engineering Contradiction:

Improveetching process simplicityVSAvoidstorage node alignment

Core Design Contradiction:

Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent applies beforehand cushioning by maintaining the supporting pattern throughout the processing sequence to continuously support the storage nodes. This pre-established support structure prevents misalignment and ensures proper positioning of storage nodes during subsequent processing steps, eliminating the need for removal and reformation of support structures.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

3Adaptability or versatility

If through holes are etched with varying widths, then etching can accommodate material differences, but leakage currents increase between adjacent storage nodes

Engineering Contradiction:

Improveetching flexibilityVSAvoidelectrical isolation

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies homogeneity by using the same oxide material for both supporting patterns and mold layers, ensuring uniform etching rates throughout the structure. This eliminates the need for variable etching widths and maintains consistent through hole dimensions, thereby preserving electrical isolation between adjacent storage nodes and preventing leakage currents.

Inventive Principle:

Principle #33Homogeneity

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach prevents bowing and tilting phenomena, maintains uniformity in through hole widths, reduces leakage currents, and enhances the yield and reliability of semiconductor memory devices by ensuring proper alignment and contact between storage nodes and contact plugs.

Implementation Method 1

Existing semiconductor memory devices face challenges such as bowing and tilting phenomena during etching processes

Methodology Applied

Scientific EffectEtching:

Implementation Method 2

The use of germanium oxide for the supporting patterns and silicon nitride for the etch stop layer, along with oxide materials for the mold layers, prevents bowing and tilting

Methodology Applied

Scientific EffectMaterial compatibility:

Implementation Method 3

ensuring proper alignment and contact between storage nodes and contact plugs

Methodology Applied

Scientific EffectAlignment:

Data Source

PatentUS8816418B2Semiconductor memory devices and methods of fabricating the same

Publication Date: 2014.08.26 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode layer. The supporting pattern includes germanium oxide.