Glass-Supported Optoelectronic Assembly for Thin Precise Components

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Solution Overview

Problem

Existing methods for producing optoelectronic components are limited in achieving compact dimensions and precise positioning of semiconductor layers, with a need for innovative techniques to embed and connect semiconductor structures efficiently while maintaining structural integrity and optical performance.

Innovation Solution

A method involving the arrangement of epitaxially grown semiconductor structures on a glass pane, embedding in molding material, exposing and forming contacts, and separating the component using the glass pane as a supporting element, allowing for thin semiconductor elements and precise positioning, enabling compact and efficient optoelectronic components with adjustable light emission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If conventional methods are used to produce optoelectronic components, then structural integrity is maintained, but the component dimensions become large and compactness is reduced

Engineering Contradiction:
Improvecomponent dimensionsVSAvoidstructural integrity
Core Design Contradiction:
Volume of moving objectVSStrength

Solution Approach 1:

The production method segments the component assembly process by separating the semiconductor structure fabrication from the final component assembly. The semiconductor layer sequence is grown epitaxially on a temporary carrier, then transferred to the final substrate, allowing compact integration without compromising structural integrity during manufacturing

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A temporary carrier substrate serves as an intermediary during the epitaxial growth process, enabling precise positioning and controlled growth of the semiconductor layer sequence. This intermediary allows the semiconductor structure to be fabricated with high precision before being transferred to the final compact component configuration

Inventive Principle:
Principle #24Intermediary (Mediator)

2Manufacturing precision

If epitaxial growth is used on glass pane, then positioning precision is improved, but manufacturing complexity increases

Engineering Contradiction:
Improvepositioning precisionVSAvoidmanufacturing complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The glass pane substrate serves multiple functions: it provides a stable platform for epitaxial growth, enables precise positioning of the semiconductor layer sequence, and acts as a temporary carrier during processing. This multi-functionality reduces the need for additional specialized equipment and fixtures, thereby managing manufacturing complexity while maintaining high positioning precision

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Length of stationary object

If semiconductor element is thinned to reduce thickness, then compactness is improved, but structural strength decreases

Engineering Contradiction:
ImprovethicknessVSAvoidstructural strength
Core Design Contradiction:
Length of stationary objectVSStrength

Solution Approach 1:

The semiconductor layer sequence is thinned to the desired compact thickness during the epitaxial growth process on the temporary carrier, before final assembly. This preliminary thinning allows precise control of the final component thickness while the temporary carrier provides structural support during handling and subsequent processing steps

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of optoelectronic components with extremely compact dimensions, precise positioning, and adjustable light emission, achieving thicknesses less than 1 mm and allowing for parallel production of identical components with reliable electrical connections and minimal dependence on angle and position.

Implementation Method 1

a first optoelectronic semiconductor structure (101), comprising a first structure carrier (110) and an epitaxially grown first semiconductor layer sequence (120)

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Data Source

PatentUS20240297286A1Method for producing an optoelectronic component, and optoelectronic component
Publication Date: 2024.09.05 AMS OSRAM INT GMBH
  • US20240297286A1 patent drawing
  • US20240297286A1 patent drawing
  • US20240297286A1 patent drawing

AI summary

A method for producing an optoelectronic component comprises the following steps arranging a first optoelectronic semiconductor structure, which comprises a first structure carrier and an epitaxially grown first semiconductor layer sequence, on a bottom of a glass pane, the first semiconductor layer sequence being oriented with respect to the glass pane, arranging a moldable material on the bottom of the glass pane, the first optoelectronic semiconductor structure being embedded into the moldable material, removing part of the moldable material and removing the first structure carrier in order to expose the first semiconductor layer sequence, forming electrical contacts on the first semiconductor layer sequence, connecting a semiconductor element having a circuit integrated on a front face to the first semiconductor layer sequence, forming electrical component contacts on a rear face of the semiconductor element, and separating the optoelectronic component by dividing the glass pane.