Glass Substrate Semiconductor Structures with Polymer Thermal Expansion Matching

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing circuit boards are not entirely satisfactory for semiconductor chip integration due to limitations in electrical performance and compatibility with advanced semiconductor technologies, particularly in terms of integration density and thermal expansion matching.

Innovation Solution

A method of forming a semiconductor structure on a glass substrate with multiple conductive layers and polymer layers, where metal features and vias are electroplated and embedded in polymer layers with adjustable thermal expansion coefficients to enhance electrical performance and reduce warpage, and the glass substrate is bonded to other carriers or frames for further integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional circuit boards are used for semiconductor chip integration, then manufacturing simplicity is maintained, but electrical performance and thermal expansion matching are insufficient

Engineering Contradiction:
Improveelectrical performanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent employs a composite structure consisting of a glass substrate combined with multiple polymer layers (first polymer layer and second polymer layer) having different properties. This composite material approach enables simultaneous achievement of improved electrical performance through the glass substrate and adjustable thermal expansion coefficients through the polymer layer selection, while maintaining manufacturing simplicity by using sequential lamination processes

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent utilizes parameter changes by selecting polymer layers with specific thermal expansion coefficients that match those of semiconductor chips. By changing the material parameters of the polymer layers to match the thermal expansion characteristics of the chips, the invention resolves the thermal expansion matching issue while maintaining the structural integrity and electrical performance of the overall assembly

Inventive Principle:
Principle #35Parameter changes

2Productivity

If minimum feature size is reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision requirements increase

Engineering Contradiction:
Improveintegration densityVSAvoidfeature size precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by providing different polymer layers with distinct properties at different locations and functions within the assembly. The first polymer layer encapsulates the semiconductor chip with specific thermal expansion matching properties, while the second polymer layer provides additional encapsulation and structural support. This localized differentiation enables precise control over thermal and mechanical properties in different regions, supporting high integration density while maintaining manufacturing precision

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent segments the encapsulation structure into multiple distinct polymer layers, each performing specific functions. The first polymer layer is dedicated to thermal expansion matching and chip encapsulation, while the second polymer layer provides additional protection and structural integrity. This segmentation allows each layer to be optimized for its specific function, enabling high precision manufacturing even at reduced feature sizes

Inventive Principle:
Principle #1Segmentation

3Reliability

If glass substrate with multiple polymer layers is used, then electrical performance and thermal expansion matching are improved, but manufacturing process complexity increases

Engineering Contradiction:
Improvethermal expansion matchingVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies preliminary action by pre-selecting and preparing polymer layers with specific thermal expansion coefficients before the assembly process. The first and second polymer layers are chosen in advance to match the thermal expansion characteristics of the semiconductor chip, eliminating the need for complex post-assembly adjustments. This preliminary preparation simplifies the overall manufacturing process while ensuring optimal thermal expansion matching

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent uses polymer layers as intermediary materials between the glass substrate and the semiconductor chip. These intermediary polymer layers serve as thermal expansion buffers that match the chip's thermal characteristics, mediating the thermal stresses between components. This intermediary approach simplifies the manufacturing process by providing a straightforward lamination sequence while achieving complex thermal management objectives

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in a semiconductor structure with improved electrical performance, reduced size, and adjustable thermal expansion properties, addressing the limitations of conventional circuit boards and simplifying the integration process while reducing yield loss and production costs.

Implementation Method 1

metal features and vias are electroplated and embedded in polymer layers

Methodology Applied
Scientific EffectElectroplating: Electroplating

Implementation Method 2

embedded in polymer layers with adjustable thermal expansion coefficients to enhance electrical performance and reduce warpage

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Implementation Method 3

the glass substrate is bonded to other carriers or frames for further integration

Methodology Applied
Scientific EffectBonding: Adhesive

Data Source

PatentUS20220392832A1Semiconductor structures and methods of forming the same
Publication Date: 2022.12.08 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20220392832A1 patent drawing
  • US20220392832A1 patent drawing
  • US20220392832A1 patent drawing

AI summary

A method of forming a semiconductor structure includes the following operations. A first conductive structure is formed on a first side of a first glass carrier. A second glass carrier is bonded to the first conductive structure. Conductive vias are formed to penetrate through the first glass carrier, and the conductive vias are electrically connected to the first conductive structure. A second conductive structure is formed on a second side of the first glass carrier opposite to the first side, and the second conductive structure is electrically connected to the conductive vias.