Laser-Splittable Wafer Layers for Precise Thin Split Control
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Solution Overview
Problem
Existing methods for laser splitting materials, such as semiconductor wafers, result in excess material waste, higher costs, and thicker split layers, leading to inefficiencies in manufacturing.
Innovation Solution
A laser-splittable structure comprising layers with different laser ablation thresholds, where a first layer has a higher threshold and subsequent layers have progressively lower thresholds, allowing precise control of the splitting process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If conventional laser splitting methods are used on semiconductor wafers, then the splitting process can be completed, but material waste increases and production costs rise
Solution Approach 1:
The patent segments the semiconductor wafer into multiple layers with different laser ablation thresholds. By creating distinct layers (first layer with higher threshold, second layer with lower threshold), the laser splitting process can selectively remove material at controlled depths, minimizing waste and reducing the need for excessive material removal.
Solution Approach 2:
The patent changes the laser ablation threshold parameter across different layers of the semiconductor structure. The first layer is engineered with a higher laser ablation threshold while the second layer has a lower threshold, allowing precise control over where the laser will ablate material. This parameter variation enables selective material removal with minimal waste.
2Manufacturing precision
If conventional laser splitting is applied to semiconductor wafers, then splitting can be achieved, but the split layers become too thick
Solution Approach 1:
The patent divides the semiconductor wafer into multiple functional layers with different laser responses. The first layer (higher threshold) and second layer (lower threshold) create distinct ablation zones, enabling precise control over split layer thickness. This segmentation allows the laser to stop at specific depths without removing excessive material.
Solution Approach 2:
Different regions of the semiconductor structure are given different local qualities in terms of laser ablation threshold. The first layer maintains higher resistance to laser ablation while the second layer is more susceptible, creating localized differences in material response that enable precise thickness control during the splitting process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material waste, lowers production costs, and achieves thinner, more reliable split layers, enhancing manufacturing efficiency and product quality.
Implementation Method 1
a first layer characterized by a first laser ablation threshold, and a second layer characterized by a second laser ablation threshold that is less than the first laser ablation threshold
Data Source
AI summary
A laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure. As non-limiting examples, various aspects of this disclosure provide laser-splittable semiconductor wafers, laser-splittable structures (for example, semiconductor wafers), methods for making a laser-splittable structure, systems for laser splitting a structure, and methods for laser splitting a structure, where the laser-splittable structure comprises a first layer characterized by a first laser ablation threshold, and a second layer characterized by a second laser ablation threshold that is less than the first laser ablation threshold.