Graded Alloy Target Structure for PVD Metal Ratio Stability
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Solution Overview
Problem
In semiconductor manufacturing, the use of alloy target material structures in physical vapor deposition processes leads to an uneven distribution of metals due to atomic weight differences, resulting in an altered metal ratio in the deposited alloy layer over time, which affects process quality and necessitates premature replacement of the target material structure.
Innovation Solution
The target material structure is designed with distinct sections having different atomic ratios of the first metal (e.g., aluminum) to the second metal (e.g., titanium), allowing the proportional relationship between the metals to adjust with the height of the structure, thereby compensating for the effects of atomic weight differences and maintaining a consistent metal ratio in the deposited alloy layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a uniform alloy target material structure is used, then the manufacturing process is simple, but the metal ratio in the deposited alloy layer changes over time due to atomic weight differences
Solution Approach 1:
The target material structure is divided into multiple sections along the bombardment direction, with each section having a different atomic ratio of the two metals. The first section has a first atomic ratio, the second section has a second atomic ratio, and so on. This segmentation compensates for the preferential bombardment of lighter atoms, maintaining consistent metal ratio in the deposited layer over time.
Solution Approach 2:
Different sections of the target material structure have different local compositions (atomic ratios of metals). The atomic ratio varies locally along the bombardment direction, with each section tailored to compensate for the cumulative effect of atomic weight differences during the deposition process.
2Productivity
If the target material structure is used for a long time, then productivity is improved, but the metal ratio in the deposited layer deviates from the desired ratio due to selective bombardment
Solution Approach 1:
The target material structure is pre-designed with varying atomic ratios in different sections before the deposition process begins. This preliminary composition gradient compensates for the selective bombardment effect that would otherwise accumulate over time, allowing the target to maintain accurate metal ratios throughout extended usage.
Solution Approach 2:
The atomic ratio parameter of the alloy is changed along the bombardment direction, creating a gradient structure. This parameter variation compensates for the changing composition that would normally occur during prolonged target usage, maintaining manufacturing precision over extended periods.
3Device complexity
If the atomic ratio is uniform throughout the target, then the target structure is simple, but one metal is preferentially bombarded and scattered due to atomic weight differences
Solution Approach 1:
The target is segmented into multiple composition zones along the bombardment direction, with each zone having a specific atomic ratio designed to counteract the preferential bombardment of lighter atoms. This segmentation maintains deposition process stability without requiring complex real-time adjustments.
Solution Approach 2:
The target material structure employs an asymmetric composition distribution along the bombardment direction, rather than a symmetric uniform structure. The atomic ratio varies asymmetrically to compensate for the asymmetric bombardment effects caused by atomic weight differences, improving reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design effectively stabilizes the metal ratio in the deposited alloy layer, reducing the need for premature replacement of the target material structure and improving the overall quality of the semiconductor manufacturing process by maintaining consistent process conditions.
Implementation Method 1
When the physical vapor deposition is carried out, inert gas ions bombard the target material structure, which will disperse the material particles in the air in the chamber and plate the material layer on the required substrate.
Implementation Method 2
inert gas ions bombard the target material structure, which will disperse the material particles
Data Source
AI summary
The invention provides a target material structure suitable for semiconductor manufacturing process, which comprises an alloy made of a first metal and a second metal, the target material structure comprises an upper section and a lower section, the atomic ratio of the first metal to the second metal in the lower section is different from the atomic ratio of the first metal to the second metal in the upper section.