Electric Discharge Tubes TRIZ Cases

A charged particle beam writing apparatus corrects irradiation position shifts using calculated charge distributions.

A plasma processing apparatus features a detachable vacuum container moved by a vertical and horizontal lifter system.

A gas circulation system recycles precursor gases in atomic layer deposition chambers, reducing material waste and lowering production costs.

Segmented alloy targets with varying atomic ratios compensate for preferential ion bombardment, maintaining consistent deposition quality.

Guide wall merges with power contact to improve alignment accuracy while maintaining compact connector volume.

Cold forging followed by hot forging creates uniform texture components in a tantalum target, resolving inconsistent sputtering rates.

Ion beam etching creates a parallel grabbing face, reducing sample attitude shifts during transfer.

Differential gas flow creates notched gate features to prevent footing and perforation.

A tapered slot wedges electron microscope grids into a resilient holder body for secure retention.

Converting positive voltage components to negative ones reduces ion energy on the lower electrode, preventing substrate damage during plasma processing.

A transmission foil filters scattered electrons in a charged-particle exposure apparatus, reducing contamination risks while maintaining high vacuum conditions.

Curved gas output holes on a rotating shutter sweep across the substrate surface, resolving uniform distribution conflicts in non-rotating apparatuses.

Segmented contacts with downwardly deformable portions resolve USB 2.0 and 3.0 incompatibility by adapting to distinct connector profiles.

Synchronized bias pulses during hybrid deposition reduce substrate temperature below 450°C while maintaining high hardness and low residual stress.

Krypton sputtering with pure targets yields low resistivity tungsten films, preventing impurity defects in integrated circuit bit lines.

A charged particle beam device applies bias voltage to the specimen to separate secondary electron signals from backscattered electrons.

An extraction plate system biases a plasma source to extract parallel beamlets, reducing condenser lens complexity while maintaining beam brightness.

A continuous plasma etch process maintains stable discharge during gas transitions using a neutralizing intermediary gas.

Sub-atmospheric delivery manages enriched selenium gas flow to prevent source deposits and extend ion source life.

Asymmetric electrode configuration in an electrostatic filter module directs ion beams through a bent tunnel path.

A segmented ion implanter uses multiple cylindrical source bodies to generate uniform plasma coverage across large substrates.

Helical laser drilling prepares thin samples, reducing processing time and material damage.

Low-energy ion flux cures polymer films on web substrates, resolving homogeneity issues and preventing surface embrittlement during high-speed processing.

Electron source operating method forms emission sites by reacting metal tip atoms with gas molecules under an electric field.

Segmented exhaust paths isolate filling gas from the reaction space, eliminating substrate contamination while maintaining pressure balance.

Adiabatic expansion of cleaning gas creates atomic aggregates that remove acute silicon irregularities from wafer edges without re-adhesion.

A plasma processing apparatus uses a Faraday shield component to reduce RF bias on the induction coil.

A triac dimmable power supply unit integrates damping and bleeder circuits to stabilize voltage.

A distributed constant line filter blocks high-frequency noise in plasma processing power feed circuits.

A ribbon beam ion implanter positions a workpiece support through a thin ion beam to deposit ions on specific wafer regions.

Multi discharging tubes combine transformer, inductive, and capacitive plasma sources for stable ionized gas generation.

Region-specific thermal conductivity in a substrate supporting member manages heat transfer to maintain uniform temperature distribution during plasma etching.

A substrate processing device uses periodic rotation to alternate between gas injection stages and purge phases.

An embedded member inside a stage through hole reduces inter-electrode distance to suppress abnormal discharge.

A plasma-formed assistance layer allows selective removal at specific energy thresholds, preventing deposit blockage in micronized silicon openings.

A charged particle microscope assigns sample information values by comparing detector signals to pre-defined data class elements.

Tunable RF matching circuit adjusts capacitance and inductance to eliminate power reflection during dual-level pulsing operations.

Dedicated remote plasma systems prevent aluminum fluoride formation and component erosion to stabilize deposition rates.

Silicone elastomer coatings shield flexible RF straps from fluorine and oxygen radicals, reducing particle contamination and extending component lifespan.

Dynamic scan velocity adjustment compensates for non-uniform beam current, eliminating overscan losses while maintaining dose uniformity.

A plasma generator coil paired with a capacitor limits voltage to reduce ion bombardment.

A two-step plasma etching method uses a segmented resist and oxide film mask to define precise trench profiles.

Adjusting RF bias power frequency based on recess aspect ratio prevents bowing and tapering in high aspect ratio etching patterns.

Heating components to 100-200°C during a bake purge removes byproducts, reducing maintenance time and contamination in substrate treating apparatuses.

Closed-loop optical emission spectroscopy modulates deposition parameters to suppress hydrogen etching and boost microcrystalline silicon production rates.

Multivariate trajectory analysis detects precise plasma endpoints in variable multi-mode processes, eliminating optical spectrum inaccuracies.

A method adjusts ion beam electron addition using sheet resistance measurements to neutralize surface charges on semiconductor wafers.

Serial parallel conversion units arranged along four sides reduce signal delay and increase throughput in multi-beam writing systems.

A flexible supporter between the printed circuit board and casing disperses pressing force from mating connectors, preventing damage to thin boards.