Substrate Processing Device with Periodic Rotation for Film Quality
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing substrate processing apparatuses face issues with film quality degradation due to centrifugal forces during rotation, causing the adsorption process to be compromised and resulting in thin films being deposited via chemical vapor deposition instead of atomic layer deposition, which affects the quality of the thin films.
Innovation Solution
The apparatus includes a supporting unit, a lid with separate regions for first and second gas injection, a purge gas unit, and a rotation unit that stops rotation during processing in each region, ensuring stable atomic layer deposition by maintaining a distance between gas injection units and using a purge gas to prevent gas mixing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the rotation unit continuously rotates the substrate supporting unit, then the substrate can sequentially pass through the first injection space and the second injection space, but centrifugal force prevents normal adsorption process and degrades film quality
Solution Approach 1:
The rotation unit performs periodic rotation to move the substrate between injection spaces, then periodically stops to enable proper adsorption process. This periodic motion pattern allows the system to achieve both continuous processing capability and proper film deposition quality by alternating between movement phase and stationary processing phase.
2Device complexity
If the first gas injection unit and second gas injection unit are positioned at equal distances from the substrate, then the structure is symmetric and simple, but gas mixing occurs and prevents stable atomic layer deposition
Solution Approach 1:
The first gas injection unit and second gas injection unit are positioned at different distances from the substrate (first distance < second distance). This asymmetric configuration creates different gas flow dynamics and concentration gradients, preventing gas mixing between the first and second gases, thereby enabling stable atomic layer deposition process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the stability and quality of thin film deposition by preventing gas mixing and maintaining a stable environment for atomic layer deposition, thereby improving the film quality.
Implementation Method 1
an adsorption process of adsorbing the first gas onto the substrate is performed in the first injection space
Implementation Method 2
the first gas adsorbed onto the substrate reacts with the second gas injected by the second gas injection unit, thereby performing a deposition process of depositing a thin film on the substrate
Implementation Method 3
due to a centrifugal force which is generated as the substrate rotates continuously
Data Source
AI summary
The present disclosure relates to an apparatus for processing substrate including a supporting unit for supporting a substrate, a lid disposed apart from the supporting unit in an upward direction, a first gas injection unit coupled to the lid to inject a first gas into a first region, a second gas injection unit coupled to the lid to inject a second gas into a second region, a purge gas unit coupled to the lid to inject a purge gas into a third region disposed between the first region and the second region, and a rotation unit for rotating the supporting unit.