Plasma Cathode Lithography Beam Extraction
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Solution Overview
Problem
Charged particle lithography systems face complexity and size issues due to the need to generate a high brightness point source, spread, and collimate the beam before patterning, which complicates the system design and operation.
Innovation Solution
A plasma-based charged particle lithography system that uses a plasma chamber as a wide area source, combined with an extraction plate system featuring a plurality of apertures and a projection optics system to generate and direct charged particle beamlets for patterning substrates, allowing for efficient and uniform patterning with adjustable plasma conditions to reduce energy spread.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If a high brightness point source is used to generate a divergent beam that is then collimated before patterning, then the beam brightness is improved, but the system complexity and size increase due to the necessity of condenser lens systems and multiple beam conditioning stages
Solution Approach 1:
The patent extracts only the essential function of beam generation and patterning by using a plasma source that directly produces parallel beams without requiring condenser lens systems. The plasma source itself serves as the beam generation medium, eliminating the need for separate beam conditioning components and reducing overall system complexity while maintaining beam brightness.
Solution Approach 2:
The plasma source performs multiple functions simultaneously: it generates charged particles, provides beam collimation through its inherent geometry, and enables direct patterning. This multi-functional approach replaces the traditional multi-component system (point source + condenser lenses + collimation optics) with a single integrated plasma source, reducing system complexity while maintaining beam quality.
2Manufacturing precision
If a fixed stencil mask or programmable aperture plate is used to divide the beam into beamlets, then the patterning capability is improved, but the system size and complexity increase due to additional masking systems and control electrodes
Solution Approach 1:
The patent replaces the mechanical masking system (stencil masks or aperture plates with control electrodes) with an electric field-based beam control mechanism. By applying voltages to electrodes within the plasma source, individual beamlets can be selectively activated or deactivated without physical masks, eliminating mechanical complexity while maintaining precise patterning capability.
Solution Approach 2:
The system controls beamlet activation by changing electrical parameters (voltages applied to electrodes) rather than physically reconfiguring masks. This parameter-based control allows dynamic programming of patterns without the mechanical complexity of movable masks or aperture plates, reducing system complexity while preserving manufacturing precision.
3Productivity
If a wide parallel beam is generated and then divided into multiple beamlets, then the patterning efficiency is improved, but the energy spread increases due to the multiple beam splitting and conditioning stages
Solution Approach 1:
The plasma source is designed with multiple emission regions or channels that directly produce segmented beamlets in parallel. This segmentation occurs at the source level rather than through subsequent beam splitting, which preserves beam quality and minimizes energy spread while maintaining high patterning efficiency through parallel beam generation.
Solution Approach 2:
The plasma source pre-forms the beamlets with minimal energy spread before they exit the source region. By establishing the parallel beam structure and individual beamlet definitions at the source itself, the system avoids subsequent beam manipulation that would increase energy spread, thereby maintaining both patterning efficiency and beam quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma-based system enables efficient and rapid patterning with high uniformity and parallelism, reducing the complexity and size of the lithography system while achieving low energy spread and improved pattern precision.
Implementation Method 1
a plasma-based charged particle lithography system that uses a plasma chamber as a wide area source
Implementation Method 2
The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber, wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma
Implementation Method 3
a projection optics system to direct at least one of the plurality of charged particle beamlets to a substrate
Data Source
AI summary
In one embodiment, a system for patterning a substrate includes a plasma chamber; a power source to generate a plasma within the plasma chamber; and an extraction plate system comprising a plurality of apertures and disposed along a side of the plasma chamber. The extraction plate system is configured to receive an extraction voltage that biases the extraction plate system with respect to the plasma chamber wherein the plurality of apertures are configured to extract a plurality of respective charged particle beamlets from the plasma. The system further includes a projection optics system to direct at least one of the plurality of charged particle beamlets to the substrate.