Twin-Chamber Remote Plasma System for Deposition Stability
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Solution Overview
Problem
Conventional semiconductor processing chambers using a shared remote plasma system for both deposition and cleaning gases suffer from instability due to aluminum component reactions with fluorine-containing cleaning gases, leading to aluminum fluoride formation, erosion, and consumption of precursor gases, resulting in deposition rate instability and frequent component replacement.
Innovation Solution
A twin-chamber system with dedicated remote plasma systems for deposition and cleaning precursors, where each processing region has a first remote plasma system for deposition precursors and a shared second remote plasma system for cleaning precursors, strategically injecting cleaning radicals through a plasma distribution ring to prevent over-cleaning and AlF formation, and using an argon purge to prevent AlF residue transport.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a shared remote plasma system is used for both deposition and cleaning gases, then device complexity is reduced, but deposition rate stability deteriorates due to aluminum fluoride formation and precursor gas consumption
Solution Approach 1:
The patent divides the remote plasma system into separate dedicated systems: one remote plasma system for deposition precursors and another for cleaning precursors. This segmentation prevents the formation of aluminum fluoride by eliminating the reaction between fluorine radicals and aluminum components, thereby maintaining stable deposition rates while managing device complexity through functional separation.
Solution Approach 2:
The patent extracts the cleaning plasma generation function from the deposition plasma system by introducing a dedicated cleaning remote plasma system. This extraction removes the harmful interaction between cleaning gases and aluminum components that causes deposition rate instability, while the separated systems can be optimized for their respective functions.
2Reliability
If cleaning gases are flowed through aluminum components, then cleaning effectiveness is improved, but harmful factors increase due to aluminum fluoride formation and component erosion
Solution Approach 1:
The patent introduces an intermediary approach by using a dedicated cleaning remote plasma system that generates cleaning radicals in a separate environment. The cleaning precursors are activated in this dedicated system where aluminum fluoride formation is minimized, and the cleaned radicals are then introduced to the chamber for cleaning, thus maintaining cleaning effectiveness while reducing harmful byproduct formation.
Solution Approach 2:
The patent creates an inert environment for cleaning plasma generation by using a dedicated cleaning remote plasma system with minimal aluminum component exposure. This inert environment prevents the reaction between fluorine radicals and aluminum, eliminating aluminum fluoride formation while maintaining cleaning effectiveness through controlled radical generation and delivery.
3Adaptability or versatility
If the same remote plasma system is used for both deposition and cleaning, then system versatility is improved, but component lifespan decreases due to erosion and residue buildup
Solution Approach 1:
The patent segments the remote plasma system into dedicated deposition and cleaning systems, which extends component lifespan by preventing erosion and aluminum fluoride buildup in the deposition system. Each dedicated system is optimized for its specific function, reducing the degradation that would occur from alternating between deposition and cleaning modes in a shared system.
Solution Approach 2:
The patent extracts the cleaning function into a separate dedicated system, removing the source of erosion and residue buildup from the deposition remote plasma system. This extraction preserves the deposition system components from harmful reactions, significantly extending their operational lifespan while the cleaning system handles the harsh cleaning gas environment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design stabilizes deposition rates, reduces AlF formation and defects, and significantly extends the lifespan of remote plasma system components by preventing AlF residue buildup and erosion, achieving a stable deposition rate with reduced defect performance.
Implementation Method 1
plasma processes are often used for deposition or etching of various material layers
Implementation Method 2
plasma enhanced chemical vapor deposition (PECVD) allows deposition processes to be performed at lower temperatures
Implementation Method 3
the reaction of fluorine radicals with aluminum surfaces to form aluminum fluorides (i.e., one or more species of the genus of AlFX)
Implementation Method 4
strategically injecting cleaning radicals through a plasma distribution ring
Implementation Method 5
using an argon purge to prevent AlF residue transport
Data Source
AI summary
A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.