Graded Porous Dielectric Layers for Lower Parasitic Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Challenges arise during the scaling-down process of semiconductor devices, impacting quality, yield, performance, and reliability, particularly due to issues with parasitic capacitance.
Innovation Solution
A semiconductor device design featuring a substrate with multiple porous dielectric layers of varying porosity, including a top, middle, and bottom porous dielectric layer, where the porosity increases from bottom to top, reducing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional scaling-down process is used, then device dimensions are reduced, but parasitic capacitance increases and performance deteriorates
Solution Approach 1:
The patent introduces porous dielectric layers with controlled porosity (ranging from 30% to 70%) to replace conventional solid dielectric materials. The porous structure reduces the dielectric constant of the insulating layers, thereby decreasing parasitic capacitance between conductive elements while maintaining electrical insulation properties. This enables continued device scaling without the performance degradation typically associated with reduced dimensions.
Solution Approach 2:
The patent systematically varies the dielectric constant parameter by creating multiple porous dielectric layers with different porosity values. The first porous dielectric layer has a dielectric constant of 2.5-3.5, while the second porous dielectric layer has a dielectric constant of 2.0-3.0. This parameter optimization allows minimization of parasitic capacitance while maintaining reliable device operation at scaled dimensions.
2Reliability
If dielectric constant is reduced to lower parasitic capacitance, then device performance improves, but manufacturing complexity increases
Solution Approach 1:
The patent divides the dielectric structure into multiple discrete porous dielectric layers, each with specific porosity and dielectric constant ranges. The first porous dielectric layer is positioned between the first conductive layer and the second conductive layer, while the second porous dielectric layer is positioned between the second conductive layer and the third conductive layer. This segmentation allows independent optimization of each layer's electrical properties and facilitates modular manufacturing processes.
Solution Approach 2:
Different regions of the device utilize porous dielectric layers with locally optimized porosity and dielectric constant values. The first porous dielectric layer has a dielectric constant of 2.5-3.5, while the second porous dielectric layer has a dielectric constant of 2.0-3.0, tailored to the specific electrical requirements of different device regions. This local quality approach enables precise control of parasitic capacitance in different areas without requiring uniform complexity throughout the entire device structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves semiconductor device performance by lowering dielectric constant and reducing parasitic capacitance, enhancing overall device functionality.
Implementation Method 1
performing an energy treatment to turn the bottom energy-removable layer into a bottom porous dielectric layer, turn the top energy-removable layer into a top porous dielectric layer, and form a middle porous dielectric layer
Data Source
AI summary
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; a first bottom conductive layer positioned in the substrate; a bottom porous dielectric layer positioned on the substrate; a top porous dielectric layer positioned on the bottom porous dielectric layer; a middle porous dielectric layer positioned between the bottom porous dielectric layer and the top porous dielectric layer; and a mixing-area conductive structure positioned along the top porous dielectric layer, the middle porous dielectric layer, and the bottom porous dielectric layer, and positioned on the first bottom conductive layer. A porosity of the top porous dielectric layer is greater than a porosity of the middle porous dielectric layer. The porosity of the middle porous dielectric layer is greater than a porosity of the bottom porous dielectric layer.