Graphene Nanopatterning via Block Copolymer Self-Assembly
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Solution Overview
Problem
Current methods face challenges in precisely patterning graphene at a nanoscale due to complexity and inefficiency, particularly in forming high-density graphene nanopatterns for electronic devices without using topological guide patterns, which complicates the process and increases dead zones.
Innovation Solution
The method involves forming a block copolymer layer directly on a graphene layer, using directed self-assembly to create a mask pattern that allows for precise patterning of graphene nanopatterns with widths less than 10 nm, eliminating the need for topological guide patterns and simplifying the process for large-area applications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used to pattern graphene, then the process becomes complex and requires topological guide patterns, but the manufacturing precision and ease of manufacture deteriorate due to increased process steps and dead zones
Solution Approach 1:
The patent extracts and removes the topological guide pattern step from the conventional lithography process. By using block copolymer self-assembly directly on the graphene layer, the method eliminates the need for separate guide pattern formation, thereby reducing process complexity while maintaining nanoscale patterning precision
Solution Approach 2:
The block copolymer layer performs self-assembly to automatically form the mask pattern without requiring external guidance or topological guides. This self-service mechanism simplifies the overall process by allowing the material to self-organize into the desired nanoscale structures through thermodynamic driving forces
2Manufacturing precision
If topological guide patterns are used for graphene patterning, then the process can be controlled, but dead zones increase and the ease of operation deteriorates
Solution Approach 1:
The patent removes the topological guide pattern component entirely from the process. The block copolymer self-assembly method achieves pattern control through direct self-organization on the graphene surface, eliminating the need for guide patterns and thereby reducing dead zones while improving ease of operation
Solution Approach 2:
Instead of using top-down lithography with guide patterns to control patterning, the patent inverts the approach by using bottom-up self-assembly where the block copolymer naturally forms the pattern without external guidance. This inversion eliminates dead zones and simplifies the operation
3Manufacturing precision
If conventional patterning methods are used, then the process can be implemented, but productivity deteriorates due to complex steps and inability to form high-density nanopatterns
Solution Approach 1:
The block copolymer layer self-assembles into high-density nanopatterns without requiring complex lithography steps. This self-service mechanism dramatically improves productivity by forming desired nanopatterns directly through self-organization, enabling high-density patterning in fewer process steps
Solution Approach 2:
The patent changes the fundamental parameter of pattern formation from external lithographic writing to internal self-assembly. This parameter change enables high-density nanopattern formation because the block copolymer can naturally pack into dense periodic structures determined by its molecular architecture, thereby improving productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the easy formation of high-density graphene nanopatterns with desired sizes and shapes, reducing dead zones and simplifying the manufacturing process, making it suitable for commercialization and high-performance device production.
Implementation Method 1
forming a block copolymer layer on the graphene layer, wherein the block copolymer layer includes a plurality of first regions and a plurality of second regions arranged parallel to the graphene layer
Data Source
Figure 1A
Figure 1B~1C
Figure 1D~1E
AI summary
A method of forming the graphene nanopattern (200P) is disclosed, which includes forming a graphene layer (200) on a substrate, forming a block copolymer layer (300) on the graphene layer as well as on a region of the substrate not covered by the graphene layer on at least one side of the graphene layer, forming a mask pattern (300M) from the block copolymer layer (300) by removing one of a plurality of first regions (30A) and a plurality of second regions (30B) of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask (300M). The block copolymer layer may be formed to directly contact the graphene layer, as well as the region of the substrate structure not covered by the graphene layer. The forming of the block copolymer layer may include using direct self assembly assisted by the edge portion of the graphene layer without using an additional topological guide.