Graphene Transfer Processing With Copper Removal And Adhesion Treatment
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Solution Overview
Problem
Conventional methods for obtaining graphene yield products of poor quality with high metal impurity contamination and poor transferability, making them unsuitable for industrial electronic applications.
Innovation Solution
A process involving a layered structure with a rigid substrate, adhesive polymer, and copper layer, where the copper is removed and the graphene surface is treated with an adhesion promoter and amine-containing chemical compound to enhance transferability and adhesion, reducing metal impurities to exceptionally low levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional transfer methods are used to obtain graphene on a rigid substrate, then the graphene can be transferred from the copper layer to the substrate, but the graphene quality deteriorates with high metal impurity contamination and poor transferability
Solution Approach 1:
The patent extracts and removes the copper layer through selective chemical etching, separating it from the graphene. This extraction process eliminates the source of metal impurities while preserving the graphene quality, directly resolving the contradiction between transferability and contamination.
Solution Approach 2:
The patent introduces an adhesive polymer layer as an intermediary between the graphene and the rigid substrate. This mediator enables controlled transfer of graphene while preventing direct contact between copper and substrate, reducing metal impurity contamination during the transfer process.
2Ease of operation
If conventional transfer methods are used, then graphene can be obtained on a rigid substrate, but the transferability to target substrates remains poor
Solution Approach 1:
The patent applies adhesion promoters and amine-containing chemical compounds to the graphene surface before transfer. This preliminary treatment enhances the graphene's adhesion properties in advance, ensuring reliable transfer to target substrates without defects during subsequent processing.
Solution Approach 2:
The patent modifies the surface chemistry parameters of graphene by treating it with adhesion promoters and amine-containing compounds. These parameter changes improve the graphene's interfacial adhesion characteristics, enabling reliable transferability to various target substrates.
3Productivity
If metal impurity levels are above 10^12 at/cm², then conventional processing can be performed, but large-scale semiconductor fabrication becomes impossible
Solution Approach 1:
The patent systematically extracts copper and other metal impurities through selective chemical etching processes. This extraction reduces metal impurity concentration below 10^12 at/cm², enabling large-scale semiconductor fabrication while maintaining production capability.
Solution Approach 2:
The patent replaces mechanical transfer methods with chemical processing approaches. By using controlled chemical etching and adhesion chemistry, the process achieves low impurity levels suitable for semiconductor fabrication while maintaining scalability for large-scale production.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process produces high-quality graphene with low metal contamination, enabling efficient transfer and strong adhesion to target substrates, suitable for semiconductor fabrication.
Implementation Method 1
treating the exposed surface of the graphene with an adhesion promoter and an amine containing chemical compound
Data Source
AI summary
A process for obtaining a product which includes graphene, the process having the following steps: providing a layered structure which across a cross section of the same includes stacked, in the same order, a rigid substrate, an adhesive polymer layer, graphene and a copper layer attached to a surface of the graphene; removing the copper layer, thereby exposing the surface of the graphene; treating the exposed surface of the graphene with an adhesion promoter and an amine containing chemical compound. Also, a product having graphene and obtained by the process.