Nitrogen Doping of Graphene via Electron Beam Irradiation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current nitrogen doping methods for materials with carbon atoms in sp2 hybridization, such as graphene, are inefficient and unattractive due to the use of high temperatures and toxic chemicals, leading to material defects and lack of versatility.
Innovation Solution
A process involving exposure of graphene to dinitrogen and irradiation with electron or light ion beams, eliminating the need for toxic chemicals and high temperatures, while allowing for selective nitrogen doping and potential functionalization with carbon-oxygen bonds.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature heat treatment is used for nitrogen doping, then nitrogen incorporation into carbon materials is achieved, but the process becomes economically unattractive and causes substantial defects in the material
Solution Approach 1:
The patent replaces the thermal field (heat treatment) with a particle beam field (electron or light ion beams) to achieve nitrogen doping. The beam irradiation provides energy for nitrogen incorporation without requiring high temperature heating, thus avoiding thermal damage and defects while maintaining doping efficiency.
Solution Approach 2:
The patent changes the fundamental parameter from temperature-based activation to beam energy-based activation. By using electron or light ion beams with energies above 0.1 MeV, the process achieves nitrogen doping at ambient or low temperatures, fundamentally altering the activation mechanism from thermal to radiative.
2Reliability
If chemical doping methods using ammonia or organic compounds are used, then nitrogen doping is achieved, but toxic chemical compounds must be used making the process unattractive from economic and ecological viewpoints
Solution Approach 1:
The patent replaces chemical field interactions (reactive chemical compounds) with a physical field (particle beam irradiation) to achieve nitrogen doping. This substitution eliminates the need for toxic chemical reagents like ammonia or organic nitrogen compounds, making the process environmentally friendly and economically attractive while maintaining doping effectiveness.
Solution Approach 2:
The patent uses nitrogen-containing gas or vapor as an intermediary medium that is activated by beam irradiation. The beam energy activates the nitrogen species in the gas phase, enabling clean nitrogen transfer to the carbon material without requiring direct contact with toxic liquid or solid chemical dopants.
3Reliability
If N+ ions or thermalized neutral nitrogen species are used for doping, then nitrogen incorporation is achieved, but the process lacks versatility and cannot easily enable functionalization with carbon-oxygen bonds
Solution Approach 1:
The patent introduces dynamic control of the doping process through beam parameter adjustment (energy, flux, duration) and atmosphere composition control. This allows the same beam irradiation process to be adapted for different outcomes: pure nitrogen doping with one set of parameters, and nitrogen doping combined with oxygen functionalization with another set of parameters, achieving versatility without changing the fundamental method.
Solution Approach 2:
The patent makes the beam irradiation process universal by showing it can achieve multiple functions: (1) nitrogen doping through activation of nitrogen-containing atmospheres, and (2) simultaneous oxygen functionalization through activation of oxygen-containing atmospheres or residual oxygen. A single method thus replaces multiple specialized processes.
4Object-affected harmful factors
If beam irradiation is used for nitrogen doping, then the process is clean and eliminates toxic chemicals, but high beam energy is required which may cause material damage
Solution Approach 1:
The patent optimizes the beam energy parameter to a specific range (above 0.1 MeV for electrons or light ions) that is sufficient to activate nitrogen species for doping but below the threshold for causing significant material damage. This precise parameter control enables clean doping without the harmful effects of excessive energy deposition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient, clean, and versatile nitrogen doping with controlled electron output work, suitable for applications in electronic components, batteries, and other devices, reducing material defects and optimizing performance.
Implementation Method 1
irradiating the material and the dinitrogen placed in contact with a beam of electrons or of light ions whose energy is greater than or equal to 0.1 MeV
Implementation Method 2
irradiating the material and the dinitrogen placed in contact with a beam of electrons or of light ions whose energy is greater than or equal to 0.1 MeV
Implementation Method 3
irradiating the material and the dinitrogen placed in contact with a beam of electrons or of light ions whose energy is greater than or equal to 0.1 MeV
Data Source
AI summary
A process for the nitrogen doping of a material includes a set of carbon atoms in the sp2 hybridization state. The process further includes the material not being oxidized beforehand, then placing the material in contact with dinitrogen. Irradiating the material and the dinitrogen placed in contact with a beam of electrons or of light ions whose energy is greater than or equal to 0.1 MeV, to obtain a material wherein some of the carbon atoms in the sp2 hybridization state is nitrogen-doped.