Graphene Semiconductor Device Transfer Method

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Solution Overview

Problem

The challenge lies in growing a graphene layer on semiconductor substrates like silicon (Si) or GaAs, which is complicated and limits the application of graphene in semiconductor devices due to the complexity of the deposition process, especially for large-area graphene layers.

Innovation Solution

A method for manufacturing a graphene semiconductor device involves forming a multilayered member with a sacrificial substrate and semiconductor layer, transferring a graphene layer onto a base substrate, and combining the structures to enable contact between the semiconductor layer and the graphene layer, allowing for the formation of a graphene semiconductor device suitable for organic light emitting displays and memory applications.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If a catalyst layer is used to deposit large-area graphene layer, then the graphene layer can be deposited successfully, but the deposition process becomes complicated

Engineering Contradiction:

Improvegraphene layer areaVSAvoiddeposition process complexity

Core Design Contradiction:

Area of stationary objectVSDevice complexity

Solution Approach 1:

The patent removes the catalyst layer from the graphene deposition structure, extracting the complicating element while maintaining large-area graphene production. The graphene is deposited directly on the semiconductor substrate without requiring a separate catalyst layer, thereby simplifying the overall process while achieving the desired large-area coverage.

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The semiconductor substrate serves multiple functions: it acts as both the substrate for graphene deposition and the functional semiconductor component of the final device. This eliminates the need for separate catalyst layers and subsequent transfer processes, as the substrate itself supports both graphene growth and device operation.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Adaptability or versatility

If graphene layer is grown on semiconductor substrate, then direct integration is achieved, but the process is difficult and limits application

Engineering Contradiction:

Improvegraphene application in semiconductor devicesVSAvoidgraphene deposition difficulty

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent introduces a sacrificial layer as an intermediary between the semiconductor substrate and the graphene layer. This sacrificial layer facilitates the deposition process by providing a temporary support structure that can be easily removed afterward, enabling graphene transfer to the semiconductor substrate without direct growth complications.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The sacrificial layer is deposited in advance before the graphene layer, creating a prepared interface that simplifies subsequent graphene deposition. This preliminary action establishes a favorable condition for graphene formation that would be difficult to achieve by direct deposition on the semiconductor substrate alone.

Inventive Principle:

Principle #10Preliminary action

3Ease of manufacture

If small-area graphene layer is deposited by stripping method, then deposition is simple, but large-area deposition is not achievable

Engineering Contradiction:

Improvedeposition process simplicityVSAvoidgraphene layer area

Core Design Contradiction:

Ease of manufactureVSArea of stationary object

Solution Approach 1:

The patent uses a sacrificial layer as a temporary template or copy structure that enables scalable graphene production. By depositing graphene on the sacrificial layer and then transferring it to the semiconductor substrate, the method replicates the successful small-area stripping approach at large scales, maintaining process simplicity while achieving large-area coverage.

Inventive Principle:

Principle #26Copying

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method facilitates the integration of graphene with semiconductor layers, enhancing the application of graphene in semiconductor devices by simplifying the deposition process and enabling the creation of functional devices such as graphene thin film diodes, organic light emitting displays, and resistive random access memory (RRAM).

Implementation Method 1

forming a graphene layer on the gate insulating layer

Methodology Applied

Scientific EffectDeposition: Deposition (physical)

Implementation Method 2

removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer

Methodology Applied

Scientific EffectEtching:

Data Source

PatentUS8716766B2Graphene semiconductor device, manufacturing method thereof, organic light emitting display, and memory including graphene semiconductor device

Publication Date: 2014.05.06 SAMSUNG ELECTRONICS CO LTD

AI summary

Graphene semiconductor device, a method of manufacturing a graphene semiconductor device, an organic light emitting display and a memory, include forming a multilayered member including a sacrificial substrate, a sacrificial layer, and a semiconductor layer deposited in sequence, forming a transfer substrate on the semiconductor layer, forming a first laminate including the transfer substrate and the semiconductor layer by removing the sacrificial layer to separate the sacrificial substrate from the semiconductor layer, forming a second laminate by forming a graphene layer on a base substrate, combining the first laminate and the second laminate such that the semiconductor layer contacts the graphene layer, and removing the transfer substrate.