Graphene Transfer with Adhesion Promoter for Low Metal Contamination
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Solution Overview
Problem
Conventional methods for obtaining graphene on a rigid substrate result in poor-quality products with high metal impurity contamination and poor transferability, making them unsuitable for industrial electronic applications.
Innovation Solution
A process involving a layered structure with a rigid substrate, adhesive polymer, and copper layer, where graphene is treated with an adhesion promoter and amine-containing chemical compound to enhance transferability and adhesion, reducing metal impurities to levels suitable for semiconductor fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional methods are used to grow and transfer graphene on rigid substrates, then graphene can be obtained for electronic applications, but the graphene quality is poor and contaminated with metal impurities
Solution Approach 1:
The patent extracts and removes the copper layer from the graphene structure through selective etching processes, thereby separating the graphene from the metal substrate that causes contamination. This extraction eliminates the source of metal impurities while preserving the graphene quality.
Solution Approach 2:
The patent introduces adhesive polymer layers as intermediary materials between the graphene and substrates. These polymer layers facilitate controlled transfer and bonding without direct contact between graphene and metal surfaces, preventing metal impurity contamination while maintaining graphene integrity.
2Ease of operation
If conventional transfer methods are used, then graphene can be moved to different substrates, but the transferability and adhesion are poor
Solution Approach 1:
The patent applies adhesive promoters and amine-containing chemical compounds to the graphene surface before transfer operations. This preliminary treatment enhances surface properties and adhesion characteristics, ensuring better bonding performance during subsequent transfer and substrate attachment steps.
Solution Approach 2:
The patent modifies surface chemical parameters by treating graphene with specific chemical compounds that alter surface energy and adhesion properties. These parameter changes improve both transferability and final adhesion quality without compromising graphene integrity.
3Ease of manufacture
If metal impurities are present above 10^12 atoms/cm², then conventional processing can be maintained, but electronic properties of graphene are detrimental
Solution Approach 1:
The patent replaces mechanical/physical transfer methods with chemically-assisted transfer processes. By using chemical etchants and adhesive promoters, the process achieves superior contamination control (metal impurity levels below 10^12 atoms/cm²) while maintaining manufacturing feasibility through standardized chemical processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process produces high-quality graphene with exceptionally low metal contamination, enabling efficient transfer and adhesion to target substrates, suitable for electronic applications.
Implementation Method 1
treating the exposed surface of the graphene with an adhesion promoter and an amine containing chemical compound
Data Source
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AI summary
A process for obtaining a product which comprises graphene, the process comprising: providing a layered structure which across a cross section of the same comprises stacked, in the same order, a rigid substrate, an adhesive polymer layer, graphene and a copper layer attached to a surface of the graphene; removing the copper layer, thereby exposing the surface of the graphene; treating the exposed surface of the graphene with an adhesion promoter and an amine containing chemical compound. Also, a product comprising graphene and obtained by the process.