Green-Absorbing Semiconductor Composition for Small-Pixel Image Sensors
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Solution Overview
Problem
Silicon photodiodes in image sensors suffer from reduced sensitivity due to small absorption areas, leading to deteriorated performance in light conversion and high integration capabilities.
Innovation Solution
A composition for a photoelectric device using a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, which selectively absorbs light in the green wavelength region, enhancing sensitivity and thermal stability, and potentially replacing silicon photodiodes in image sensors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If silicon photodiodes are used in image sensors to achieve high resolution, then pixel size can be reduced, but sensitivity deteriorates due to small absorption area
Solution Approach 1:
The patent changes the material parameter from silicon to organic semiconductor compounds with specific molecular structures (Formula 1 and Formula 2) that have high extinction coefficients and strong light absorption capability in the green wavelength region, enabling small pixels to maintain high sensitivity
Solution Approach 2:
The invention uses a composite approach by combining p-type semiconductor compound (Formula 1) and n-type semiconductor compound (Formula 2) in specific ratios to create an organic photodiode material that achieves both high sensitivity and stability, replacing traditional silicon photodiodes
2Use of energy by moving object
If organic semiconductor compounds are used to replace silicon photodiodes, then light absorption efficiency improves, but thermal stability may deteriorate under high-temperature conditions
Solution Approach 1:
The patent optimizes the molecular structure parameters of organic semiconductor compounds (Formula 1 and Formula 2) with specific functional groups and conjugated structures that provide both high light absorption efficiency in the green wavelength region and enhanced thermal stability for high-temperature process compatibility
Solution Approach 2:
The invention introduces specific functional groups and molecular structures at local positions within the organic semiconductor compounds to simultaneously achieve high extinction coefficient for light absorption and thermal stability, with p-type and n-type compounds having complementary local structural features
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition improves light absorption efficiency and sensitivity in the green wavelength region, maintaining performance even under high-temperature conditions, and enables high integration without degrading device efficiency.
Implementation Method 1
A photoelectric device may convert light into an electrical signal using photoelectric effects
Data Source
AI summary
A composition for a photoelectric device includes a compound represented by Chemical Formula 1, and an image sensor and an electronic device including the same:In Chemical Formula 1, each substituent is the same as defined in the detailed description.