Grounded Metal Ring Structure Around TSVs for Plasma Charge Dissipation
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Solution Overview
Problem
Through-silicon vias (TSVs) formation generates charges that can destroy nearby circuits due to plasma-induced damage, and moisture and stress can penetrate dielectric materials, causing leakage and burn-out, which existing technologies fail to adequately address.
Innovation Solution
Grounded metal ring structures are formed around TSVs by etching ring-shaped openings and depositing conductive materials, with multiple layers aligned to connect to ground through existing conductive structures, efficiently releasing accumulated charges during plasma-based processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If TSVs are formed using plasma-based processes, then through-silicon via structures are created, but charges are generated that cause plasma-induced damage to nearby circuits
Solution Approach 1:
A grounded metal ring structure is introduced as an intermediary element between the TSV and nearby circuits. This metal ring absorbs and dissipates plasma-induced charges before they can reach and damage adjacent circuit components, effectively mediating the harmful interaction while allowing TSV formation to proceed
Solution Approach 2:
The patent converts the harmful plasma-induced charges into a beneficial effect by using the grounded metal ring to deliberately attract and dissipate these charges in a controlled manner. The charges that would otherwise damage circuits are redirected to the metal ring, transforming a harmful byproduct into a protected system
2Reliability
If dielectric materials are used in interconnect layers, then insulation is provided, but moisture and stress penetrate the material causing leakage and burn-out
Solution Approach 1:
The grounded metal ring structure acts as a protective barrier or shell around the TSV region. This metallic barrier prevents moisture penetration and stress transfer into the dielectric materials, protecting the insulation properties while maintaining structural integrity
Solution Approach 2:
The metal ring structure provides beforehand protection by creating a barrier that cushions against moisture and stress before they can penetrate the dielectric materials. This preventive measure protects the insulation layers from future damage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The grounded metal ring structures effectively absorb and release charges, reducing damage to nearby circuits and stabilizing the fabrication process by ensuring no accumulated charges, thus protecting circuits from charging effects and plasma-induced damage.
Implementation Method 1
The grounded metal ring structures effectively absorb and release charges, reducing damage to nearby circuits and stabilizing the fabrication process
Implementation Method 2
Grounded metal ring structures are formed around TSVs by etching ring-shaped openings and depositing conductive materials, with multiple layers aligned to connect to ground through existing conductive structures
Data Source
AI summary
The present disclosure describes a semiconductor structure including a TSV in contact with a substrate and a metal ring structure laterally surrounding the TSV. The metal ring structure includes one or more metal rings arranged as a stack and one or more metal vias interposed between two adjacent metal rings of the one or more metal rings. The metal ring structure is electrically coupled to the substrate through one or more conductive structures.