Photoelectrochemical Etching of Group III Nitride for Smooth Structures
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Solution Overview
Problem
Current methods for manufacturing structures using group III nitrides, such as gallium nitride, face challenges in achieving smooth etching processes without damaging the material, particularly in forming precise structures for semiconductor devices and microelectromechanical systems (MEMS).
Innovation Solution
A photoelectrochemical etching method involving the use of an alkaline or acidic etching solution containing an oxidizing agent, where the solution is injected into a rotatable container holding the group III nitride material, and the surface is irradiated with light before being rotated to discharge the solution, facilitating controlled etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If dry etching techniques (neutral-beam etching, atomic layer etching) are used to etch group III nitride, then etching precision is improved, but device complexity and manufacturing difficulty increase
Solution Approach 1:
The patent replaces complex mechanical dry etching systems (neutral-beam etching, atomic layer etching) with a photoelectrochemical etching system that uses light irradiation and chemical solutions. This substitution maintains etching precision while dramatically simplifying the device structure and manufacturing process by using optical and chemical fields instead of complex mechanical plasma generation systems
Solution Approach 2:
The patent changes the etching mechanism from physical/chemical plasma reactions in dry etching to photoelectrochemical reactions. By controlling parameters such as light wavelength, etching solution composition (oxidizing agents like KMnO4, K2Cr2O7, H2O2), and electrical potential, the patent achieves precise etching with simpler equipment
2Manufacturing precision
If dry etching techniques are used to etch group III nitride, then etching precision is improved, but damage to the material occurs
Solution Approach 1:
The patent replaces the high-energy plasma and ion bombardment in dry etching with gentle photoelectrochemical reactions. The etching is achieved through controlled chemical dissolution enhanced by light irradiation and electrical potential, which removes material without the mechanical damage and stress caused by ion bombardment in dry etching processes
Solution Approach 2:
The patent changes the etching mechanism from aggressive physical/chemical plasma reactions to controlled photoelectrochemical reactions. By adjusting parameters such as light intensity, solution concentration, and electrical potential, the etching rate and selectivity are controlled to achieve precise etching without material damage
3Ease of manufacture
If PEC etching is used to etch group III nitride, then ease of manufacture is improved, but productivity decreases due to solution discharge time
Solution Approach 1:
The patent implements periodic action by alternating between light irradiation (etching phase) and container rotation (discharge phase). This periodic operation allows the etching solution to be efficiently discharged through centrifugal force during rotation, then the container stops for the next etching cycle, thereby improving productivity while maintaining the simplicity of PEC etching
Solution Approach 2:
The patent introduces dynamic rotation of the container to actively discharge the etching solution. By rotating the container during the discharge phase, centrifugal force rapidly removes the used solution, reducing idle time and improving the cycle rate without complicating the etching process itself
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables smooth and controlled etching of group III nitride structures, reducing material damage and improving the manufacturing process for semiconductor devices and MEMS by ensuring uniformity and precision in etching.
Implementation Method 1
photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons
Implementation Method 2
irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution
Implementation Method 3
rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container
Data Source
AI summary
A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.