Group III-Nitride Vertical Power Device Deep Via Interconnection
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Solution Overview
Problem
Conventional technologies face challenges in integrating group III-Nitride based vertical power devices efficiently due to high cost, inefficiency, and complexity in interconnecting devices with terminals on opposite sides of the substrate.
Innovation Solution
A vertical power device design featuring a substrate with a layered group III-Nitride based device stack, including isolated vertical devices connected through deep vias and isolation structures, allowing for efficient electrical connection and reduced packaging material use, enabling parallel or series connections of devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional integration methods are used for vertical power devices, then device integration is achieved, but interconnection complexity and cost increase due to terminals located on opposite sides of the substrate
Solution Approach 1:
The patent transitions from lateral interconnection (2D plane) to vertical interconnection (3D depth) by forming deep vias through the substrate. This dimensional change allows terminals on opposite sides of the substrate to be connected directly through the substrate thickness, reducing interconnection complexity and enabling more efficient device integration.
Solution Approach 2:
The substrate itself serves as an intermediary element that provides both mechanical support and electrical interconnection pathways. By utilizing the substrate's depth as an interconnection medium through deep via formation, the patent simplifies the overall interconnection architecture compared to conventional lateral routing methods.
2Reliability
If deep vias and isolation structures are implemented, then electrical connection efficiency improves and parasitics are reduced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the device structure into distinct functional regions using isolation structures that divide the substrate into separate zones. This segmentation allows for controlled formation of deep vias in specific locations, managing manufacturing complexity by organizing the fabrication process into discrete, manageable steps rather than attempting to pattern entire substrates at once.
Solution Approach 2:
The patent applies isolation structures and deep vias only in specific local regions where electrical interconnection is required, rather than uniformly across the entire substrate. This localized approach reduces overall manufacturing complexity by limiting the scope of complex fabrication steps to only the necessary areas.
3Quantity of substance
If vertical devices are integrated with terminals on opposite sides, then device density increases, but isolation and contact formation become more difficult
Solution Approach 1:
The substrate serves multiple functions simultaneously: it provides mechanical support for the vertical devices, acts as an electrical interconnection medium through deep vias, and provides physical isolation between adjacent devices through appropriately positioned isolation structures. This multi-functionality enables high device density without proportionally increasing isolation structure complexity.
Solution Approach 2:
The vertical device structure itself, with its inherent top and bottom terminals, provides the necessary configuration for deep via formation. The devices' own geometry and terminal locations serve the dual purpose of functional operation and facilitating the interconnection scheme, reducing the need for additional complex isolation elements.
Data Source
AI summary
A vertical power device is disclosed, the device having a top side and a bottom side, and the device comprising (i) a substrate; (ii) a layered group III-Nitride based device stack formed atop the substrate; (iii) a first vertical group III-Nitride based device and a second vertical group III-Nitride based device formed in the group III-Nitride based device stack, wherein the first vertical group III-Nitride based device and the second vertical group III-Nitride based device are electrically connected; and (iv) a first vertical device isolation structure that isolates the first vertical group III-Nitride based device from the second vertical group III-Nitride based device. Also disclosed are a vertical power system integrating vertical power devices and a process for fabricating a vertical power device.