Guard Ring Contact Hole Positioning for Electric Field Control
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Solution Overview
Problem
The existing semiconductor apparatuses with guard rings suffer from the generation of local high electric fields near contact holes connecting second peripheral conducting films and guard rings, which can disrupt the electric field distribution and lead to inefficiencies in the semiconductor device's operation.
Innovation Solution
The semiconductor apparatus design positions at least one second contact hole on the inner side relative to the center line of the guard ring, reducing the electric field influence in the adjacent drift region and preventing high electric field generation, while also ensuring that the second peripheral conducting films are connected to the guard rings without interfering with each other.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If contact holes are provided locally on guard rings to connect second peripheral conducting films, then the guard rings can be electrically connected to the conducting films, but local high electric fields are generated in the adjacent drift region
Solution Approach 1:
The patent applies asymmetry by positioning the contact hole specifically on the inner side of the guard ring's center line rather than at the center or outer side. This asymmetric positioning changes the electric field distribution pattern, preventing concentration of electric field lines in the drift region adjacent to the contact hole, thereby eliminating the local high electric field problem while maintaining electrical connection reliability.
Solution Approach 2:
The patent applies local quality by creating different functional zones around the guard ring. The contact hole is positioned in a specific location (inner side of center line) where it provides electrical connection without generating harmful electric fields. This localized positioning optimizes the specific property (electric field distribution) in the critical region adjacent to the drift region.
2Reliability
If second peripheral conducting films are made thick to improve conductivity, then electrical connection is enhanced, but processing accuracy decreases and clearances between films increase
Solution Approach 1:
The patent resolves this contradiction by moving the problem to another dimension - the circumferential direction. Instead of trying to control radial clearances between thick conducting films, the invention disperses multiple second peripheral conducting films around the guard ring's circumference. This allows each film to be thick for good conductivity while maintaining adequate clearance from adjacent films in the circumferential direction, where space is abundant.
Solution Approach 2:
The patent applies segmentation by dividing the continuous peripheral conducting film structure into multiple discrete second peripheral conducting films arranged circumferentially. Each segment (individual conducting film) can be made thick independently without interfering with adjacent segments, as they are separated in the circumferential direction. This segmentation allows thick films with good conductivity while maintaining manufacturing precision through adequate circumferential spacing.
Data Source
AI summary
A semiconductor apparatus includes a semiconductor substrate including a device region and a peripheral region. The peripheral region includes guard rings. A first peripheral insulating film, first peripheral conducting films, a second peripheral insulating film and second peripheral conducting films are laminated in the peripheral region. Each of the first peripheral conducting films extends annularly. Each of the second peripheral conducting films overlaps a part of the corresponding first peripheral conducting film. Each of the second peripheral conducting films is connected to the corresponding first peripheral conducting film via a first contact hole. Each of the second peripheral conducting films is connected to the corresponding guard ring via a second contact hole. A center of at least one of the second contact holes is located on inner side with respect to a center line of the guard ring in a width direction.