Semiconductor Devices TRIZ Cases

A light emitting device package uses alloy layers between conductive frames to strengthen bonding while a resin layer improves light extraction.

Single photolithographic steps define optoelectronic device contact areas, eliminating tolerance scatter and improving light yield.

A semiconductor light emitting device uses spaced electrodes to improve heat dissipation.

Segmented epitaxial blocks and adjusted LDD lengths increase horizontal separation to boost breakdown voltage while maintaining manufacturing simplicity.

Stamping wider gaps then bending connecting bars reduces electrode contact region spacing below stamping limits, lowering manufacturing costs.

Pixelating the buffer layer into discrete islands relaxes stress from lattice mismatch, enabling high-quality quantum well growth.

Step flow growth on inclined sapphire terraces increases light output in AlGaN quantum well structures while maintaining stable emission spectra.

Varying sealing member height over offset light emitting element minimizes light absorption to resolve color unevenness trade-offs.

Extending a wavelength conversion layer to LED chip side surfaces increases the light orientation angle beyond 140 degrees while maintaining color consistency.

A segmented common electrode structure for micro light-emitting diode displays separates transparent and conductive layers to optimize optical and electrical paths.

Partial polysilicon filling creates a recess for dielectric insertion, reducing deposition thickness and cost while maintaining structural integrity.

Segmented Cr, Al or Ag, and Au electrode layers reduce contact resistance and heating while increasing light extraction efficiency in nitride LEDs.

Integrally covering supporting substrate and sealing member side surface with a single sealing part.

Mask layers define a window for ion implantation to form the charge region, resolving epitaxial stack integration challenges in vertical architectures.

A silicon avalanche light emitting device uses reverse and forward biased junctions to inject high energy electrons and low energy holes into an interaction zone.

Graded aluminum composition in the GaN barrier layer prevents two-dimensional electron gas movement to resolve power and mobility tradeoffs.

Sloped surfaces on AlGaN layers reduce stress on the covering layer while increasing active area to enhance deep ultraviolet light emission efficiency.

A silicon carbide avalanche photodiode uses a guard ring to laterally surround the anode region for efficient electrical field confinement.

Capacitively coupled trench electrodes shape electric fields to reduce on-resistance while maintaining breakdown voltage.

A current blocking layer prevents light absorption under electrodes to enhance optical efficiency.

Dual drift regions with distinct doping levels and a planar field insulation plate enhance breakdown voltage while reducing on-resistance in LDMOS transistors.

A trench photodiode with an integrated domed germanium structure focuses light directly into the absorber.

Segmented multiplication zones optimize electron and hole impact ionization to resolve the gain versus response time trade-off in hyperfrequency applications.

A Group III nitride semiconductor production method uses intermittent hydrogen gas etching to reduce polarity inversion defect density.

Segmenting the gate over the drift region lowers parasitic capacitance, allowing higher operating frequencies and drain voltages without sacrificing control.

Epitaxially formed buried channels isolate carriers from high-k gate dielectrics, reducing flicker noise without increasing fabrication complexity.

Segmented electron blocking layers with graded energy level inclinations minimize net polarization charge, reducing operating voltage and leakage current.

A semiconductor gate structure with a snake-shaped lateral portion extends the dopant diffusion path length within the active layer.

A high voltage LDMOS device uses a segmented lightly doped diffusion region between the gate and drain to enhance the depletion layer.

A (In)(Al)GaAsSb base and InGaAs collector structure creates a discontinuous valence band to block holes.

Varying anode layer surface areas near the IGBT region enhances positive hole injection, reducing forward voltage fluctuations and heat loss.

Conductive bridges connect gate regions of varying resistivity in a trench structure, reducing gate charge and improving switching control.

Segmenting the semiconductor body into isolated mesas containing transistor cells prevents crystal defect propagation, lowering on-resistance.

Lightly doped drift and buffer layer reduces static power loss while maintaining high blocking voltage against thermal destruction.

A porous semiconductor layer redirects photons away from absorbing metal contacts, reducing optical loss and improving light extraction efficiency.

A transistor device uses a coupling circuit to connect a second field electrode to the source node based on voltage conditions.

A vertical transistor uses a reentrant profile to shield conductive layers from directional deposition.

A switching device uses a complex oxide ion conducting layer to enable electrochemical switching via electron and metal ion supply.

Doping a transition metal dichalcogenide layer with specific elements shifts the threshold voltage positively, resolving reliability and control trade-offs.

An aluminum nitride cap prevents contact-to-gate short circuits by resisting CMP erosion on non-recessed metal gates.

A transparent electrode layer with controlled thickness improves light extraction in semiconductor devices.

Segmented trench geometry lowers gate capacitance to reduce switching loss and ON voltage in insulated gate bipolar transistors.

Spacing the reflective wavelength-converting layer from the LED source reduces heat-induced efficiency loss and improves color uniformity.

Segmenting the double patterning into two mask layers prevents corner rounding and inconsistent fin lengths during substrate etching.

A direct fixation method bonds a luminescent color conversion member to light emitting elements, establishing a solid thermal path.

A GaN power device uses a recessed gate electrode to form a two-dimensional electron gas and improve conductivity.

Positioning second contact holes on the inner side of guard ring center lines suppresses local high electric fields near drift regions.

A passivation layer extends into a barrier layer recess between gate and drain terminals of a high electron mobility transistor.

A light emitting diode uses a segmented texture structure to promote electron spreading across semiconductor layers.