Semiconductor Light Emitting Device Electrode Redesign
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Solution Overview
Problem
Semiconductor light emitting devices face challenges in enhancing light extraction efficiency and heat dissipation, particularly due to the limitations of existing electrode configurations and substrate materials, which affect the overall performance and efficiency of the devices.
Innovation Solution
The semiconductor light emitting device incorporates a stacked structure with a first and second electrode configuration, where the second electrode is directly below the light emitting layer for efficient heat dissipation and includes a support substrate with a high thermal conductivity, along with an uneven surface structure on the light extraction plane to improve light extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If electrodes are formed on the light extraction plane to improve electrical connection, then electrical conductivity is improved, but light extraction efficiency deteriorates due to electrode obstruction
Solution Approach 1:
The patent moves the electrodes from the light extraction plane (2D surface) to the side surfaces and bottom of the semiconductor layer (3D spatial redistribution). This dimensional transition allows electrical connections to be established without obstructing the light extraction path, resolving the contradiction between electrical connectivity and light extraction efficiency.
Solution Approach 2:
The patent segments the electrode configuration into multiple parts: side surface electrodes formed on the lateral surfaces of the semiconductor layer and bottom electrodes formed on the lower surface. This segmentation allows electrical connections to be distributed across different spatial locations, avoiding obstruction of the light extraction plane while maintaining reliable electrical contact.
2Device complexity
If conventional substrate materials are used to simplify device structure, then manufacturing complexity is reduced, but heat dissipation performance deteriorates due to insufficient thermal conductivity
Solution Approach 1:
The patent employs composite material strategies by combining semiconductor layers with specific thermal conductivity characteristics and integrating them with substrate structures that enhance heat dissipation. The multi-layer composite structure allows optimization of both structural simplicity and thermal management performance through material selection and architectural design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light extraction efficiency and heat dissipation properties, allowing for improved performance by increasing the quantity of emitted light and reducing heat resistance, thereby achieving better thermal management and luminous efficiency.
Implementation Method 1
the second electrode is directly below the light emitting layer for efficient heat dissipation and includes a support substrate with a high thermal conductivity
Data Source
Figure 1
Figure 2
Figure 3A~3B
AI summary
According to one embodiment, a semiconductor light emitting device (110, 120) includes a stacked structure body (100), a first electrode (50), a second electrode (60), and a dielectric body part (40). The stacked structure body (100) includes a first semiconductor layer (10), having a first portion and a second portion juxtaposed with the first portion, a light emitting layer (30) provided on the second portion, a second semiconductor layer (20) provided on the light emitting layer (30). The first electrode (50) includes a contact part (51) provided on the first portion and contacting the first semiconductor layer (10). The second electrode (60) includes a first part (61) provided on the second semiconductor layer (20) and contacting the second semiconductor layer (20), and a second part (62) electrically connected with the first part (61) and including a portion overlapping with the contact part (51) when viewed from the first semiconductor layer (10) toward the second semiconductor layer (20). The dielectric body part (40) is provided between the contact part (51) and the second part (62).