LED Texture Structure for Electron Spreading and Optical Loss Reduction
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Solution Overview
Problem
Conventional vertical type light emitting diodes experience issues with operating voltage and optical loss due to the composition of semiconductor layers in contact with electrodes, affecting electron spreading and reliability.
Innovation Solution
A light emitting diode design featuring a texture structure with a predetermined pattern connected to the electrode, including a superlattice layer to improve electron spreading and reduce dislocation, thereby optimizing operating voltage and optical loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a conventional vertical type light emitting diode uses standard semiconductor layers in contact with electrodes, then the structure is simple, but the operating voltage is high and optical loss increases
Solution Approach 1:
The semiconductor layer in contact with the electrode is segmented into a multi-layer texture structure consisting of alternating high-refractive-index and low-refractive-index layers. This segmentation allows optimization of light extraction while maintaining electrical contact, reducing optical loss without significantly increasing overall structural complexity.
Solution Approach 2:
The texture structure uses composite semiconductor layers with different refractive indices arranged in alternating patterns. This composite structure optimizes both electrical conductivity for low operating voltage and optical properties for reduced light loss, resolving the contradiction between simple structure and energy efficiency.
2Ease of manufacture
If standard semiconductor layers are used in contact with electrodes, then manufacturing is straightforward, but electron spreading is poor and reliability decreases
Solution Approach 1:
The contact layer is divided into multiple alternating layers with different electrical and optical properties. This segmentation creates multiple interfaces that facilitate electron spreading while maintaining manufacturing compatibility with existing semiconductor fabrication processes.
Solution Approach 2:
Different layers in the texture structure have locally optimized properties: some layers are optimized for electrical conductivity to enhance electron spreading, while others are optimized for optical properties. This local quality differentiation improves reliability without requiring complete redesign of the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces operating voltage, enhances yield and reliability, and prevents crack generation by promoting electron spreading and controlling strain through the texture structure, maintaining consistent optical loss and operating voltage during the manufacturing process.
Implementation Method 1
promoting electron spreading through the texture structure including the superlattice layer
Implementation Method 2
controlling a strain
Implementation Method 3
preventing a dislocation through the texture structure having the superlattice structure
Implementation Method 4
electric energy is converted into light energy
Implementation Method 5
A light emitting diode is a p-n junction diode having a characteristic in which electric energy is converted into light energy
Data Source
AI summary
Disclosed are a light emitting diode and a lighting system having the same. The light emitting diode according to an embodiment may include a first electrode having a plurality of patterns formed on an upper surface thereof; a texture structure having a plurality of patterns corresponding to the plurality of patterns of the first electrode and configured to be in contact with at least one of the plurality of patterns of the first electrode; a first conductive semiconductor layer disposed on the texture structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a second electrode disposed on the second conductive semiconductor layer.